Monolithic Power Systems, Inc.

Chengdu Monolithic Power Systems Co., Ltd.

Eric Braun

Joel McGregor

Ji-Hyoung Yoo

Jeesung Jung

Da Chen

Huaifeng Wang

Albert M Bergemont

James Nguyen

Hunt Hang Jiang

Francis Yu

A MOSFET fabricated in a semiconductor substrate, includes: a gate oxide region formed atop the semiconductor substrate; a gate polysilicon region formed on the gate oxide region; a source region of a first doping type formed in the semiconductor substrate and located at a first side of the gate polysilicon region; and a drain region of the first doping type formed in the semiconductor substrate and located at a second side of the gate polysilicon region. The gate polysilicon region has a first sub-region of the first doping type, a second sub-region of the first doping type, and a third sub-region of a second doping type, wherein the first sub-region is laterally adjacent to the source region, the second sub-region is laterally adjacent to the drain region, and the third sub-region is formed laterally between the first and second sub-regions.

Low leakage ESD MOSFET

A FET device has a substrate, a plurality of repetitive source stripes, a first layout of drain stripe having a first drift region and a first drain region, a second layout of drain stripe having a second drift region and a second drain region, a first drain contactor contacted with the first drain region and connected to a drain terminal, a second drain contactor contacted with the second drain region and connected to a first gate terminal, a source contactor contacted with a source region in each of the plurality of repetitive source stripes and connected to a source terminal, a first gate region positioned between the source region and the first drain region and connected to the first gate terminal, and a second gate region positioned between the source region and the second drain region and connected to a second gate terminal.

FET device insensitive to noise from drive path

An ESD protection circuit having a discharging transistor and a body snatching circuit. The discharging transistor is electrically coupled between a first node and a second node. The gate of the discharging transistor is electrically coupled to a driving voltage. The body snatching circuit receives the voltages at the first and second nodes and outputs either the voltage at the first node or the voltage at the second node based on which of these two voltages have a lower value. The output voltage of the body snatching circuit is provided to the body of the discharging transistor.

Bi-directional snapback ESD protection circuit

An LDMOS device with a field plate contact having a field plate contact metal layer being positioned above the field plate contact. The field plate contact metal layer has a sub-maximum size satisfied for the electrical connection between the field plate contact and an external applying voltage. This sub-maximum size is prescribed by the physical limitation of the LDMOS device. The field plate contact metal layer extends a sub-maximum length from one edge toward to the other edge of the field plate contact.

LDMOS device with a field plate contact metal layer with a sub-maximum size

An ESD protection circuit having a discharging transistor and a body snatching circuit. The discharging transistor is electrically coupled between a first node and a second node. The gate and the body of the discharging transistor are electrically coupled together. The body snatching circuit receives the voltages at the first and second nodes and outputs either the voltage at the first node or the voltage at the second node based on which of these two voltages have a lower value. The output voltage of the body snatching circuit is provided to the body of the discharging transistor.

A semiconductor device reducing parasitic loop inductance of system for the switching converter. The semiconductor device has an input voltage pin, a ground reference pin, a switching pin, and a semiconductor die, wherein the semiconductor die comprises a high-side power switch and a low-side power switch and a metal connection. The metal connection directly connects the high-side power switch and the first terminal of the low-side power switch, and is along and proximity to an edge of the semiconductor device to which the input voltage pin is distributed.

Semiconductor device reducing parasitic loop inductance of system

A synchronous switching converter has an integrated semiconductor device. The integrated semiconductor device has a first semiconductor component and a second semiconductor component coupled in parallel. The first semiconductor component has MOSFET cells with body diodes, and the second semiconductor component has diode cells or MOSFET cells with a low forward voltage. Cells of the second semiconductor component distribute among the first semiconductor component unevenly according to a distribution of a current flowing through the integrated semiconductor device.

Synchronous switching converter and associated integrated semiconductor device

A method for fabricating a semiconductor device including: forming a block layer above a well region of a first doping type in a semiconductor substrate, wherein the block layer has an opening for defining a first region in an upper part of the well region and has sidewalls at sides of the opening; implanting dopants of a second doping type into the well region through the opening of the block layer to form the first region; implanting dopants of the first doping type into the first region in the manner of large-angle-tilt dopants implantation to form a second region for a first transistor, and to form a third region for a second transistor; and forming, for both of the first transistor and the second transistor, a fourth region between the second region and the third region.

Method for fabricating LDMOS with reduced source region

An ESD protection circuit used to protect a protected circuit coupled between a first node and a second node against an ESD event. The ESD protection circuit has a discharging circuit and a control circuit. The discharging circuit selectively provides a current path for discharging a current from the first node to the second node. The control circuit controls the discharging circuit to switch on the current path during an ESD event. The control circuit further controls the discharging circuit to switch off the current path during the normal operation of the protected circuit.

ESD protection circuit with false triggering prevention

A lateral DMOS device with peak electric field moved below a top surface of the device along a body-drain junction is introduced. The LDMOS has a deep body and a drift region formed by a series of P-type and N-type implants, respectively. The implant doses and depths are tuned so that the highest concentration gradient of the body-drift junction is formed below the surface, which suppresses the injection and trapping of hot holes in the device drain-gate oxide region vicinity, and the associated device performance changes, during operation in breakdown.

Lateral DMOS and the method for forming thereof

A multi-time programmable memory cell has a differential multi-time programmable memory cell and a second-level latch cell. The differential multi-time programmable memory cell provides a first balance signal and a second balance signal, and the second-level latch cell receives the first balance signal and the second balance signal and provides an output signal according to the first balance signal and the second balance signal based on a first latch control signal and a second latch control signal.

Multi-time programmable non-volatile memory cell and associated circuits

A switching circuit having a low side driver providing a three-level low side drive signal keeps a low side power switch slightly on during a dead time between the low side power switch turn off and a high side power switch turn on, thus a current flowing through a body diode is mostly distributed to the slightly on low side power switch instead of the body diode.

Switching circuit and the method thereof

A method for fabricating a LDMOS device in a semiconductor substrate of a first doping type, including: implanting a series of dopants into the semiconductor substrate using a first mask, and forming a first region of a second doping type adjacent to the surface of the semiconductor substrate, a second region of the first doping type located beneath the first region, and a third region of the second doping type located beneath the second region; implanting dopants into the semiconductor substrate using a second mask, and forming a fourth region of the second doping type adjacent to the first, second and third regions, wherein the fourth region extends from the surface of the semiconductor substrate to approximately the same depth as the third region; and implanting dopants into the first region using a third mask, and form a first well of the first doping type.

Method for fabricating low-cost isolated resurf LDMOS and associated BCD manufacturing process

An EEPROM memory cell with a coupler region is disclosed. The coupler region has a well and at least one feeder region formed in the well. The at least one feeder region is configured to provide majority carriers to a channel region defined in the well so that a portion of the channel region adjoining the top surface of the coupler region is inverted during an erase operation.

EEPROM memory cell with a coupler region and method of making the same

An OTP memory cell and an OTP memory circuit. The OTP memory cell having a memory module, a write module, a read module, and a load module. Data may be written into the memory module once the write module is active; and data may be read out of the memory module once the read module is active. The OTP memory cell may also have a first latch module and a second latch module.

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Mountain View, CA, United States of America

Eric Braun