Motorola Corporation

Eric Boulian

Bruce L Morton

Michel Bron

Anil Gercekci

Alexis Marquot

Graham Stout

Alain Duret

A method for writing data to non-volatile memory (50) involves alternately applying programming and erase voltages to a control gate wordline of a memory cell. A write includes programming and erasing bits (30, 31, . . . , 32, 33) in the memory array (56). After writing, a verify erase (VE) operation and a verify program (VP) operation are performed to determine if multiple cycles are necessary. The method also permits refreshing data in the array without transferring the data onto a data bus for improved security. In one embodiment, a three transistor EEPROM is written by providing a high voltage to the drain select of the selected wordline, while providing a low voltage to the drain select of other wordlines. Programming and erase voltages are applied to the control gate wordline of the selected wordline in cycles until the write is complete. The memory cell structure allows isolation of each bit in the array to avoid adverse effects on neighbor bits.

Method and apparatus for writing an erasable non-volatile memory

A clock signal conditioning circuit (100) for use in a smart card (102) has an input node (112) for receiving an applied clock signal, an output node (126) for producing a conditioned clock signal, a rising/falling edge detector (118) for detecting edges in the received clock signal, a bistable device (122) for forming at the output node a clock signal in response to the edge detector, and a timer (120, 124) for inhibiting switching of the bistable device for a predetermined time (T) following detection by the edge detector of an edge. Such a clock signal conditioning circuit provides a conditioned clock signal which is substantially independent of variations in the duty cycle of the applied clock signal and is substantially immune to glitches in the applied clock signal.

Clock signal conditioning circuit

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Grand-Lancy, Switzerland

Eric Boulian