Micron Technology Incorporated

Eric A Powell

Navjot Chhabra

David A Cathey

James L Dale

William J Crane

Jeffrey V Musser

Rodney D Morgan

John C Freeman

A process for forming silicon dioxide, SiO.sub.2, or silicon nitride, Si.sub.3 N.sub.4, layers on selected substrates which includes reacting diethylsilane, C.sub.4 H.sub.12 Si, with a selected oxygen-containing compound or nitrogen-containing compound in a plasma enhanced chemical vapor deposition (PECVD) chamber. The conformality of the coatings thus formed is in the range of 85% to 98%. The diethylsilane liquid source for the associated gas flow processing system may be maintained and operated at a source temperature as low as room temperature.

Process for forming highly conformal dielectric coatings in the

Disclosed is a quartz tube for a furnace for processing semiconductor wafers. The furnace comprises:

Semiconductor processing furnace tube and alignment jig

A plasma dry etch chamber is provided with an anode plate which has a cooling jacket which extends radially outwardly from a cooling core to an extent corresponding to the radial dimension of a silicon wafer work product. In order to further reduce deposit formation, the outer perimeter of the anode is designed to reduce the effects of polymer deposition.

Temperature controlled anode for plasma dry etchers for etching

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Boise, ID, United States of America

Eric A Powell