Fuji Electric Co., Ltd.

Fuji Electric., Ltd.

Eri Ogawa

Yuichi Onozawa

Hiroki Wakimoto

Akio Nakagawa

Takashi Yoshimura

Takahiro Tamura

Yoshihiro Ikura

Misaki Takahashi

Kota Ohi

Hiroyuki Tanaka

Kazutoshi Sugimura

A semiconductor device includes: an insulating circuit substrate; a semiconductor element including a first main electrode bonded to a first conductor layer of the insulating circuit substrate via a first bonding material, a semiconductor substrate deposited on the first main electrode, and a second main electrode deposited on the semiconductor substrate; and a resistive element including a bottom surface electrode bonded to a second conductor layer of the insulating circuit substrate via a second bonding material, a resistive layer with one end electrically connected to the bottom surface electrode, and a top surface electrode electrically connected to another end of the resistive layer, wherein the first main electrode includes a first bonded layer bonded to the first bonding material, the bottom surface electrode includes a second bonded layer bonded to the second bonding material, and the first bonded layer and the second bonded layer have a common structure.

Semiconductor device

The position of the side wall of a metal electrode is precisely controlled and the coverage of a layer above the metal electrode is improved. A semiconductor device is provided, including: a semiconductor substrate; and a metal electrode formed above an upper surface of the semiconductor substrate, wherein a side wall of the metal electrode includes a lower portion contacting the semiconductor substrate, and an upper portion that is formed upper than the lower portion and has a smaller inclination relative to the upper surface of the semiconductor substrate than the lower portion. An active region formed in the semiconductor substrate is further included, and the metal electrode may be a field plate formed on an outer side relative to the active region on the upper surface of the semiconductor substrate. The upper portion of the side wall of the field plate may have an upward-convex shape.

Semiconductor device and fabrication method

To prevent an intermediate region from contacting a cathode electrode even if a cathode region is partially defective. There is provided a semiconductor device with a semiconductor substrate that has a field stop region where first impurities of a first conduction type are implanted, an intermediate region that is formed on a back surface side of the field stop region and where second impurities of a second conduction type are implanted, and a cathode region of the first conduction type that is formed on a back surface side of the intermediate region. In a back surface of the semiconductor substrate, a concentration of the first impurities is higher than a concentration of the second impurities.

Semiconductor device and semiconductor device manufacturing method

For enhancing a reverse-recovery immunity of a diode element, a semiconductor device includes a first conductivity-type drift layer, a second conductivity-type anode region provided in an upper portion of the drift layer, an insulating film provided on the drift layer, an anode electrode having an ohmic contact portion ohmically contacted to the anode region through a contact hole penetrating the insulating film, and a Schottky electrode Schottky-contacted to a peripheral portion of the anode region.

Semiconductor device having schottky electrode connected to anode region

In a pin diode, a new means for a soft recovery other than the means for the soft recovery using an anode layer with a low concentration and a local lifetime control is provided. A semiconductor device comprising a drift layer of a first conductivity type provided on a semiconductor substrate of a first conductivity type, a front-surface-side region of a second conductivity type provided on a front surface side of the drift layer, an insulating-film layer provided on a front surface side of the front-surface-side region with a thickness thinner than a natural oxide film, and a metal layer provided on a front surface side of the insulating-film layer is provided.

Application of thin insulating film layer in semiconductor device and method of manufacturing semiconductor device

To improve withstand capability of a semiconductor device during reverse recovery, provided is a semiconductor device including a semiconductor substrate having a first conduction type; a first region having a second conduction type that is formed in a front surface of the semiconductor substrate; a second region having a second conduction type that is formed adjacent to the first region in the front surface of the semiconductor substrate and has a higher concentration than the first region; a third region having a second conduction type that is formed adjacent to the second region in the front surface of the semiconductor substrate and has a higher concentration than the second region; an insulating film that covers a portion of the second region and the third region; and an electrode connected to the second region and the first region that are not covered by the insulating film.

A p-type base region, in which an nemitter region is formed, and a p-type floating region are provided in a surface layer of one main surface of an n-type semiconductor substrate and are separated from each other by a trench. An emitter electrode is provided so as to cover the p-type floating region, with an interlayer insulating film interposed there between, and to come into contact with the p-type base region and the n+ emitter region. In the trench, two divided polysilicon electrodes are provided in regions that face each other, with a cavity, which is surrounded by an insulating film, interposed there between, and are arranged along both side walls of the trench and are connected to different electrodes. With this structure, it is possible to ensure the insulation between the polysilicon electrodes in the trench, to reduce stress, and to suppress an increase in gate capacitance.

Growing community of inventors

Matsumoto, Japan

Eri Ogawa