Sony Corporation

Eri Fukumoto

Yasuhiro Terai

Toshiaki Arai

Narihiro Morosawa

Tsuyoshi Kamada

Yuichi Inoue

Yuji Nakahata

Ryo Ogawa

A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.

Thin film transistor, method of manufacturing the same, and display unit

A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer.

Thin film transistor and display device

Thin film transistor, electronic device, display device, and method of manufacturing thin film transistor

A liquid crystal shutter includes a plurality of liquid crystal layers arranged in a light-incident direction; and a plurality of polarizers attached to each of the plurality of liquid crystal layers, polarization axes of 2 adjacent polarizers that have a liquid crystal layer therebetween being crossed at an angle of 90&#xb0;, the accumulated value of degrees of polarization of polarizers that have polarization axes in a first direction being identical to that of degrees of polarizations of polarizers that have polarization axes in a second direction that crosses the first direction at an angle of 90&#xb0;.

Liquid crystal shutter and image display observation system

The present invention provides a thin film transistor using an oxide semiconductor as a channel, controlling threshold voltage to a positive direction, and realizing improved reliability. The thin film transistor includes: a gate electrode; a pair of source/drain electrodes; an oxide semiconductor layer provided between the gate electrode and the pair of source/drain electrodes and forming a channel; a first insulating film as a gate insulating film provided on the gate electrode side of the oxide semiconductor layer; and a second insulating film provided on the pair of source/drain electrodes side of the oxide semiconductor layer. The first insulating film and/or the second insulating film contain/contains fluorine.

Thin film transistor, display device, and electronic device

A thin film transistor using oxide semiconductor for a channel, which may be controlled such that threshold voltage is positive and may be improved in reliability is provided. The thin film transistor includes a gate electrode, a pair of source/drain electrodes, an oxide semiconductor layer forming a channel and provided between the gate electrode and the pair of source/drain electrodes, a first insulating film as a gate insulating film provided on the oxide semiconductor layer on a side near the gate electrode, and a second insulating film provided on the oxide semiconductor layer on a side near the pair of source/drain electrodes. One or both of the first insulating film and the second insulating film includes an aluminum oxide having a film density of 2.70 g/cmor more and less than 2.79 g/cm.

Growing community of inventors

Kanagawa, Japan

Eri Fukumoto