Elmos Semiconductor Ag

Integrated Device Technology, Inc.

Erhard Muesch

Josef Janisch

Wolfram Budde

Andreas Gehrmann

In some embodiments, a method of correcting for errors in a rotational position sensor having a sine signal and a cosine signal is presented. The method includes compiling data from the sine signal and the cosine signal over a period of rotation of a motor shaft; determining offset correction parameters from the data; correcting the data with the offset correction parameters; determining amplitude difference parameters from the data; correcting the data with the amplitude difference parameters; determining phase difference parameters from the data; correcting the data with the phase difference parameters; and using the offset correction parameters, the amplitude difference parameters, and the phase difference parameters to correct the sine signal and the cosine signal.

Method for detecting errors in a rotating position sensor system having sine and cosine signals

A device for detecting the angle of incidence of radiation on a radiation incidence surface () comprises at last two first pairs () of photodiodes comprising first photodiodes () arranged along a first axis () and connected in series in a pair-wise manner. Each of the first photodiodes () comprises a space-charge zone () having a space-charge zone face () oriented towards the radiation incidence face (). Further, the device is provided with a a shading mask () arranged at a distance () above the space-charge zone faces () of the first photodiodes () and comprising radiation-transmitting areas (). Each radiation-transmitting area () is assigned to the space-charge zone faces () of the two first photodiodes () of a first pair () of photodiodes. When viewed in the direction of the normal of the radiation incidence face (), the degree of overlapping between a radiation-transmitting area () and its assigned space-charge zone faces () in the direction of the first axis () is different for at least two of the first pairs () of photodiodes. The device also comprises an evaluation unit () for monitoring the photocurrent and/or the photovoltage of each first photodiode () of each first pair () of photodiodes and for detecting, on the basis of a comparison of the photocurrents and/or the photovoltages, the angle of incidence under which the component of the radiation which in the projection is directed parallel to the first axis () impinges on the radiation incidence face ().

Device for detecting the angle of incidence of radiation on a radiation incidence surface

The NMOS transistor is provided with a semiconducting substrate (12) which is p-doped and comprises a top side (14), and with a first region (16) which is n-doped and placed into the substrate by diffusion from the top side (14) of the substrate (12). Further, the transistor comprises a second region (18) arranged within the n-conducting region (16), which is n-doped and introduced into the substrate from the top side (14) of the substrate (12), and a field oxide layer (20) which is arranged on the top side (14) of the substrate (12) and limits the p-conducting region (16) on all sides. The top side comprises a source region (22) and a drain region (24) which are n-doped and arranged within the p-conducting region (18) at a distance to each other. A gate oxide layer (26) is arranged on the top side (14) of the substrate (12) between the source and the drain regions (22, 24). According to the invention it is envisaged that the p-conducting region (18) is placed into the n-conducting region (16) by means of ion implantation and that within the p-conducting region (18) the ion concentration on the top side (14) of the substrate (12) is smaller than that at the lower limit, located within the substrate (12), between the n-conducting region (16) and the p-conducting region (18).

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Auburn Hills, MI, United States of America

Erhard Muesch