Telefunken Electronic Gmbh

Erhard Kohn

Alexander Colquhoun

Klaus Gillessen

Gunther Fenner

A varactor diode comprising a semiconductor element, with a pn-junction barrier layer or rectifying metal semiconductor junction on one outer face, an ohmic substrate contact on the opposite outer face and a glass casing in which the diode is hermetically sealed.

Varactor diode

A varactor or mixer diode comprises a mesa shaped semiconductor element having a p-n junction barrier layer or retifying junction on its upper face and a substrate contact on its opposite face, the substrate contact extending over the side faces of the semiconductor element and ending at a small spacing from the barrier layer or junction.

Varactor or mixer diode with surrounding substrate metal contact and top

In a method for the manufacture of a field-effect transistor comprising a substrate and an epitaxial layer located thereon, a V-shaped trench extending from the surface of the epitaxial layer through the epitaxial layer into the substrate is made and a zone is created by implantation in an area located in front of the V-shaped trench.

Method of manufacturing a field-effect transistor

An opto-electronic switch component which comprises two regions of good conductivity separated by a gap on a normally non-conductive substrate. When the gap is irradiated, the conductivity of the substrate increases and a connection is formed between the two regions.

Semiconductor opto-electronic switch

A variable capacitance diode comprises a low resistance semi-conductor substrate on which is epitaxially deposited three layers, a first layer adjacent the substrate having an impurity concentration which decreases towards the substrate, a very thin intermediate region and a relatively thin surface region of lower doping than the intermediate region, a barrier being formed on or in the outer surface of the relativey thin surface region. The invention also includes a method of making such a diode.

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Leingarten, Germany

Erhard Kohn