Invensense, Inc.

Erhan Polatkan Ata

Martin Lim

Michael Julian Daneman

Mei-Lin Chan

Xiang Li

Stephen Lloyd

Fariboz Assaderaghi

Sushil Bharatan

Jeremy Parker

Microphone distortion reduction is presented herein. A system can comprise: a processor; and a memory that stores executable instructions that, when executed by the processor, facilitate performance of operations, comprising: obtaining a pressure-in to voltage-out transfer function representing a distortion of an output of a microphone corresponding to a stimulus of a defined sound pressure level that has been applied to the microphone; inverting an equation representing the pressure-in to voltage-out transfer function to obtain an inverse transfer function; and applying the inverse transfer function to the output to obtain a linearized output representing the stimulus. In one example, the obtaining of the pressure-in to voltage-out transfer function comprises: creating an ideal sine wave stimulus comprising the amplitude and fundamental frequency of the time domain waveform; and generating the equation based on a defined relationship between the ideal sine wave stimulus and the time domain waveform.

Microphone distortion reduction

A method for fabricating a MEMS device includes depositing and patterning a first sacrificial layer onto a silicon substrate, the first sacrificial layer being partially removed leaving a first remaining oxide. Further, the method includes depositing a conductive structure layer onto the silicon substrate, the conductive structure layer making physical contact with at least a portion of the silicon substrate. Further, a second sacrificial layer is formed on top of the conductive structure layer. Patterning and etching of the silicon substrate is performed stopping at the second sacrificial layer. Additionally, the MEMS substrate is bonded to a CMOS wafer, the CMOS wafer having formed thereupon a metal layer. An electrical connection is formed between the MEMS substrate and the metal layer.

Method for MEMS structure with dual-level structural layer and acoustic port

A MEMS device is disclosed. The MEMS device comprises a first plate with a first surface and a second surface; and an anchor attached to a first substrate. The MEMS device further includes a second plate with a third surface and a fourth surface attached to the first plate. A linkage connects the anchor to the first plate, wherein the first plate and second plate are displaced in the presence of an acoustic pressure differential between the first and second surfaces of the first plate. The first plate, second plate, linkage, and anchor are all contained in an enclosure formed by the first substrate and a second substrate, wherein one of the first and second substrates contains a through opening to expose the first surface of the first plate to the environment.

MEMS acoustic sensor with integrated back cavity

A MEMS device includes a first plate coupled to a second plate and a fixed third plate formed on a first substrate. The first and second plates are displaced in the presence of an acoustic pressure differential across the surfaces of the first plate. The MEMS device also includes a first electrode formed on the third plate and a second electrode formed on the second substrate. The first, second plate, and third plates are contained in an enclosure formed by a first and second substrates. The device includes an acoustic port to expose the first plate to the environment. The MEMS device also includes a first gap formed between the second and third plates and a second gap formed between the second plate and the second electrode. The displacement of the second plate causes the first gap to change inversely to the second gap.

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Santa Clara, CA, United States of America

Erhan Polatkan Ata