Max-planck-gesellschaft Zur F&#xf6;rderung Der Wissenschaften E. V.

Erdmann Schubert

Klaus Ploog

Albrecht Fischer

Yoshiji Horikoshi

A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A preferred device is a bipolar transistor in which case the Dirac-delta doped p-type layer 38 is directly between n-type collector and emitter layers (32, 33). The bipolar transistor described herein has an extremely low base width and is capable of operating at high frequencies.

Bipolar transistor with monoatomic base layer between emitter and

A semiconductor light wave detector which has a first layer of a highly doped n-type semiconducting substrate, a second layer of a highly doped n-type semiconducting material, a third layer of a distinct intrinsic semiconducting material and a fourth layer of a highly doped n-type semiconducting material similar to the second layer. First and second electrical connections are provided to the fourth layer and to at least one of the first and second layers. A plurality of pairs of Dirac-delta doped monoatomic layers are in the third layer, with the first monoatomic layer of each pair being a layer of donors and with the second monoatomic layer of each pair being acceptors spaced from the donor layer and positioned on the side thereof facing the fourth layer.

Semiconductor photodetector devices with pairs of monoatomic layers

An optically bistable semiconductor device which has a doped or undoped gallium arsenide substrate and a series of alternating n-type and p-type Dirac-delta doped monoatomic layers formed on the substrate. Each Dirac-delta doped monoatomic layer is separated from the next adjacent Dirac-delta doped monoatomic layer by a layer of pure, undoped intrinsic semiconductor material such as gallium arsenide.

Optically bistable semiconductor device with pairs of monoatomic layers

A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A particularly preferred device is injection laser in which case the Dirac-delta doped layers 45 and 46 are within intrinsic layer 43. The injection laser is constructed with a hetero structure.

Injection laser with at least one pair of monoatomic layers of doping

A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A particularly preferred device is a field effect transistor in which case the Dirac-delta doped layer 13 extends between the source and drain zones (18, 19) respectively. The field effect transistor can be constructed either with a homogeneous structure or with a hetero structure or with a superlattice structure. The field effect transistors described herein have a high transconductance and are capable of operating at high current densities.

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Stuttgart, Germany

Erdmann Schubert