Technion Research & Development Foundation Limited

Tel Aviv University

Other

Intel Corporation

Rafael-armament Development Authority Ltd.

Eran Socher

Yael Nemirovsky

Ofir Degani

Dan Seter

Samuel Jameson

Rotem Banin

David Elata

Ofir Bochobza-Degani

Shmuel Kaldor

Ehud Netzer

Oflr Bochobza-Degani

Eliezer Halpern

Nadav Buadana

There is described an integrated antenna for radiating an electromagnetic beam at a wavelength λ, for example, in a range of millimeter and submillimeter waves. The antenna is integrated in a dielectric die having specific dimensions, and is configured as a dense array comprising two or more radiating elements (transmitters). The proposed array is denser than a conventional 1D or 2D array, would such a conventional array be arranged on the same dielectric die with a spacing λ/2 between its neighbouring radiating elements.

Integrated array antenna

Technique for improving efficiency of on-chip antennas, comprising placing each antenna on an individual area on the chip, defined by channels provided in the chip before or after placing the antenna(s). The channels may be metallized. Frequency of a radiating antenna element may be locked by wireless injection locking using a locked subharmonic frequency.

Technique for improving efficiency of on-chip antennas

Embodiments provide a multi-phase voltage controlled oscillator (VCO) that produces a plurality of output signals having a common frequency and different phases. In one embodiment, the VCO may include a passive conductive structure having a first ring and a plurality of taps spaced around the first ring. The VCO may further include a capacitive load coupled to the passive conductive structure, one or more feedback structures coupled between a pair of opposing taps of the plurality of taps, and one or more current injection devices coupled between a pair of adjacent taps of the plurality of taps.

Multi-phase voltage-controlled oscillator

An array of uncooled infrared sensors based on a micro-machined temperature sensitive MOS transistor. The sensor array is fabricated using a commercial CMOS process on SOI wafers, followed by backside silicon dry etching for each sensor pixel. Active sensor pixels may include either, an integrator and buffer, or simply the sensing transistor, serving also as the selection device. The transistor bias controls the selected device and the sensitivity of the sensor. PMOS transistors and switched operation are used for noise minimization.

TMOS-infrared uncooled sensor and focal plane array

A method of efficiently extracting the pull-in parameters of an electrostatically activated actuator. The actuator is modeled as an elastic element. For each of a plurality of deformations of the elastic element, a corresponding voltage is calculated. The highest such voltage is the pull-in voltage of the actuator. The corresponding deformation is the pull-in deformation of the actuator. Each deformation is defined by fixing a displacement of one degree of freedom of the elastic body and calculating corresponding equilibrium displacements of all the other degrees of freedom without the application of any external mechanical forces to ensure equilibrium. The actuator is altered to optimize whichever pull-in parameter is relevant to the desired application of the actuator.

Efficient method of extracting the pull-in parameters of an electrostatically activated MEMS device for the purpose of designing the device

Method and apparatus for sensing the displacements of micromachined devices and sensors. The method is referred to as the enhanced modulated integrative differential optical sensing (EMIDOS). The target micromachined proof-mass, for which displacements are measured, includes a grid of slits. The micromachined device is bonded to a CMOS chip containing a matching photodiodes array and their readout electronics. The grid is aligned with the photociiodes. An illumination source, such as an LED, is then mounted above the micromachined device. A model for the noise equivalent displacement (NED), including mechanical, electrical and optical domains, as well as all noise sources is derived. The model predicts that displacements below 10[&#x221a;{square root over ( )}Hz] can be measured. The design comprises innovative inertial sensors, an accelerometer and a rategyroscope employing the EMIDOS. Performance models for the noise equivalent acceleration (NEA) and noise equivalent rate (NER) are also derived. The models show that an accelerometer with a very low NEA can be realized.

Method and apparatus for micro-machined sensors using enhanced modulated integrative differential optical sensing

A micro-electromechanical optical inertial sensing device comprises a CMOS chip ( ), comprising at least one integrated photodiode ( ) and analog electronics; an elastically suspended proof mass ( ); and a light source ( ). A light beam from the light source casts a partial shadow of the proof mass over the photodiode when the proof mass is at rest. When subjected to an inertial movement, the proof mass swings causing the partial shadow to shift and modulate the illumination of the photodiode. An output current signal from the photodiode is processed by the analog electronics to generate measurement results.

Growing community of inventors

Tel Aviv, Israel

Eran Socher