Samsung Electronics Co., Ltd.

Eonguk Kim

Chanhee Jeon

Sukjin Kim

Sangyoung Cho

An electrostatic discharge clamp circuit includes a resistor connected between a first node and a second node, a first capacitor connected between the second node and a third node, a second capacitor connected between a fourth node and the third node, a third capacitor connected between a fifth node and the third node, a first inverter providing a power supply voltage or a voltage of the fourth node based on a voltage of the second node, a second inverter providing an output voltage of the first inverter or a voltage of the fifth node based on the voltage of the fourth node, a third inverter configured to provide an output voltage of the second inverter or the ground voltage based on the voltage of the fifth node.

Electrostatic discharge clamp circuit

An output driving circuit includes: a plurality of bias voltage generating circuits configured to generate a plurality of bias voltages; a switching control circuit; and an output voltage generating circuit. The switching control circuit is configured to selectively connect one bias voltage generating circuit of the plurality of bias voltage generating circuits to the output voltage generating circuit based on an output voltage. The output voltage generating circuit is configured to transmit and receive a parasitic current generated due to transition of the output voltage to and from the one bias voltage generating circuit selectively connected to the output voltage generating circuit through the switching control circuit.

Output driving circuit for generating output voltage based on plurality of bias voltages and operating method thereof

Provided is a receiver circuit which receives an input signal. A first restriction circuit provides a first reference voltage or an input signal higher than the first reference voltage to a first node. A second restriction circuit provides a second reference voltage or the input signal lower than the second reference voltage to a second node. A first PMOS transistor pulls up an output node based on a voltage of the first node, and a first NMOS transistor pulls down the output node based on a voltage of the second node. A second PMOS transistor is connected between the output node and the first PMOS transistor, and a second NMOS transistor is connected between the output node and the first NMOS transistor. At least one compensation resistor is connected between a power supply voltage and the first PMOS transistor or between the first NMOS transistor and a ground.

Receiver circuit and signal receiving method thereof

An output driver and a data output driving circuit using the output driver includes a pull-up driver including at least three pull-up transistors connected between a high voltage and an output node in a stack structure of three stages or more and a pull-down driver including at least three pull-down transistors connected between a ground node and the output node in a stack structure of three stages or more.

Output driver for high voltage and wide range voltage operation and data output driving circuit using the same

An apparatus for controlling retention of data includes a logic circuit, a retention control cell circuit, and an I/O cell circuit. The logic circuit generates at least one retention enable signal before a chip enters a reduced power mode. The retention control cell circuit latches the retention enable signal and outputs a retention enable control signal based on a first power signal of the logic circuit and a detection result of a second power signal for input/output (I/O). And, the I/O cell circuit latches data based on the retention control signal.

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Seoul, South Korea

Eonguk Kim