Samsung Display Co., Ltd.

Boe Hydis Technology Co., Ltd.

Hydis Technologies Co., Ltd.

Eok Su Kim

Jun Hyung Lim

Kyung Jin Jeon

So Young Koo

Hyung Jun Kim

Yun Yong Nam

Kyoung Seok Son

Myung Kwan Ryu

Joon Seok Park

Jae Chul Park

Jun Ho Lee

Ho Nyeon Lee

Se Yeoul Kwon

Tae Sang Kim

Hyungjun Kim

Soyoung Koo

Kyungjin Jeon

Yunyong Nam

Jang Soon Im

Sun Hee Lee

Hyun Yeul Lee

Jun Hee Lee

Ju Yong Park

Yeon Keon Moon

Taesang Kim

Sang Woo Sohn

Myoung Hwa Kim

Ji Hun Lim

Jay Bum Kim

Hye Lim Choi

Won Jin Kim

Geun Chul Park

Jong Baek Seon

Jongdo Keum

Jung Chul Woo

A display device includes a first conductive layer including a first voltage line and a second voltage line, a buffer layer, a semiconductor layer including a first active layer and a second active layer, a first gate insulating layer, a second conductive layer including a first gate electrode overlapping the first active layer and a second gate electrode overlapping the second active layer, a passivation layer, a via layer, a bank pattern layer including a first bank pattern and a second bank pattern partially spaced apart from each other, a third conductive layer including a first electrode and a second electrode spaced apart from each other, and light emitting elements. The passivation layer includes silicon nitride (SiN), and a ratio of a number of silicon-hydrogen bonds (Si—H) to a number of nitrogen-hydrogen bonds (N—H) in the silicon nitride (SiN) is in a range of about 1:0.6 to about 1:1.5.

Display device and method of fabricating the same

A gate driver includes stages, each including a first pull-up control circuit configured to apply a previous carry signal to a first control node, a buffer circuit configured to output a gate clock signal as a gate output signal, and a pull-down circuit configured to output a second low voltage as the gate output signal. The first pull-up control circuit includes a 4-1transistor including a control electrode, a first electrode, and a second electrode connected to a second control node. The first pull-up control circuit includes a 4-2transistor including a control electrode, a first electrode connected to the second control node, and a second electrode connected to a first control node. The first pull-up control circuit includes a hold capacitor including a first electrode connected to the second control node and a second electrode configured to receive a constant voltage.

Gate driver, display device including the same, and electronic apparatus including the same

A display device according to an embodiment includes a light blocking layer disposed on a substrate; an oxygen supply layer disposed on and contacting the light blocking layer; a semiconductor layer disposed on the oxygen supply layer; and a light emitting diode electrically connected with the semiconductor layer. The semiconductor layer includes an oxide semiconductor, and the oxygen supply layer includes a metal oxide that includes at least one of indium, zinc, gallium, and tin.

Display device

A scan driving circuit includes multiple stages. A j-th stage of the stages includes a buffer part electrically connected to an output terminal that operates in response to a potential of a first control node, a holding part electrically connected to the output terminal that operates in response to a potential of a second control node, and an inverter part electrically connected to the first and second control nodes that controls the potentials of the first and second nodes. The inverter part includes a control transistor including a gate electrically connected to the first control node, and a drain electrically connected to a first voltage terminal that receives a first low voltage or a second voltage terminal that receives a second low voltage. The control transistor includes a dummy gate that receives a low voltage lower than or equal to the first and second low voltages.

Scan driving circuit and display device having the same

A display device includes a first transistor including a first transistor including a light blocking pattern on a substrate, an active pattern on the light blocking pattern, and a gate electrode on the active pattern, a second transistor configured to provide a data voltage to the first transistor in response to a gate signal, and a storage capacitor electrically connected to the gate electrode and the light blocking pattern, and including a first conductive pattern in a same layer as the light blocking pattern, a second conductive pattern on the first conductive pattern and overlapping the first conductive pattern, a third conductive pattern in a same layer as the gate electrode, overlapping the second conductive pattern, and electrically connected to the first conductive pattern, and a fourth conductive pattern on the third conductive pattern, overlapping the third conductive pattern, and electrically connected to the second conductive pattern.

Display device and method of manufacturing the same

A display device according to an embodiment of the present disclosure includes: a substrate; a first conductive layer on the substrate; a first insulating layer on the first conductive layer; an active pattern on the first insulating layer and including a semiconductor material; a second insulating layer on the active pattern; and a second conductive layer on the second insulating layer, wherein the first insulating layer has a first opening exposing the first conductive layer, the second insulating layer has a second opening exposing the first conductive layer, a breadth of the first opening is different than a breadth of the second opening, and a side surface of the first opening and a side surface of the second opening are formed to a top surface of the first conductive layer.

Display device and manufacturing method thereof

A display device includes a first conductive layer disposed on a substrate, a passivation layer disposed on the first conductive layer, a second conductive layer disposed on the passivation layer, a via layer disposed on the second conductive layer, a third conductive layer disposed on the via layer, the third conductive layer including a first electrode, a second electrode, a connection pattern, the first electrode, the second electrode, and the connection pattern being spaced apart from each other, and a light emitting element, a first end and a second end of the light emitting element being disposed on the first electrode and the second electrode, respectively, wherein the connection pattern electrically connects the first conductive layer and the second conductive layer through a first contact hole penetrating the via layer and the passivation layer.

A display device includes first banks on a substrate and spaced apart from each other, a first electrode and a second electrode on the first banks and spaced apart from each other, a first insulating layer on the first electrode and the second electrode, and light emitting elements on the first insulating layer and each having ends on the first electrode and the second electrode. Each of the first banks includes a first pattern portion including concave portions and convex portions. The first pattern portions of the first banks are disposed on side surfaces of the first banks. The side surfaces are spaced apart and face each other. Each of the first electrode and the second electrode includes a second pattern portion on the first pattern portion and having a pattern shape corresponding to the first pattern portion on a surface thereof.

A display device includes a substrate, a first conductive layer on the substrate and including a lower light blocking pattern and a first signal line, a buffer layer on the first conductive layer, a semiconductor layer on the buffer layer and including a first semiconductor pattern and a second semiconductor pattern separated from the first semiconductor pattern, an insulating layer on the semiconductor layer and including an insulating layer pattern, a second conductive layer on the insulating layer and including a second signal line, a planarization layer on the second conductive layer, and a third conductive layer on the planarization layer and including an anode electrode. The first semiconductor pattern is electrically connected to the lower light blocking pattern by the anode electrode, and at least a portion of the second semiconductor pattern is isolated from and overlaps each of the first signal line and the second signal line.

Display device and method for fabricating the same

According to some embodiments of the present disclosure, a display device includes an active pattern including a metal oxide, a gate electrode overlapping the active pattern, a first capacitor electrode spaced apart from the active pattern and including a conductive oxide, and a second capacitor electrode on the first capacitor electrode.

Display device and method for manufacturing the same

A display device and a method of manufacturing a display device are provided. The display device includes a first conductive layer on a substrate, a passivation layer disposed on the first conductive layer and exposing at least a part of the first conductive layer, a second conductive layer disposed on the passivation layer and covering an upper surface of the passivation layer, a via layer on the second conductive layer, a third conductive layer including a first electrode, a second electrode, and a connection pattern, and spaced apart from each other on the via layer, and a light emitting element having ends that are disposed on the first electrode and the second electrode, respectively. The connection pattern electrically connects the first conductive layer and the second conductive layer through a first contact hole penetrating the via layer.

Display device including connection pattern and method of manufacturing the same

A display device includes: a substrate; a first conductive layer on the substrate and comprising a first signal line; an insulating layer pattern on the first conductive layer; a semiconductor pattern on the insulating layer pattern; a gate insulating layer on the semiconductor pattern; and a second conductive layer comprising a gate electrode on the gate insulting layer and a first source/drain electrode and a second source/drain electrode, each on at least a part of the semiconductor pattern, wherein the insulating layer pattern and the semiconductor pattern have a same planar shape, the semiconductor pattern comprises a channel region overlapping the gate electrode, a first source/drain region on a first side of the channel region and a second source/drain region on a second side of the channel region, and the first source/drain electrode electrically connects the first source/drain region and the first signal line.

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Seoul, South Korea

Eok Su Kim