Stmicroelectronics S.r.l.

Enrico Scian

Riccardo Depetro

Fabrizio Martignoni

The invention relates to an electronic level shifter circuit for driving a high-voltage output stage. This output stage comprises a complementary pair of transistors connected between first and second supply voltage references, and at least one PMOS pull-up transistor connected in series with an NMOS pull-down transistor. An additional transistor is connected in parallel with the pull-up transistor, and the driver circuit has a first output connected to the control terminal of the pull-up transistor and a second output connected to the control terminal of the additional transistor.

High voltage level shifter for driving an output stage

A method, and related circuit, prevent the triggering of a parasitic transistor in an output stage of an electronic circuit. The stage includes a transistor pair with at least one transistor of the pull-up PMOS type having respective source, gate and drain terminals and a body terminal, and a parasitic bipolar transistor having a terminal connected to the body terminal. The method includes the steps of providing a capacitor connected between the body and source terminals of the PMOS transistor; and using a control circuit to suppress the body effect of the pull-up PMOS transistor.

Method and an auxiliary circuit for preventing the triggering of a parasitic transistor in an output stage of an electronic circuit

The invention relates to a high-voltage final output stage for driving an electric load, of the type which comprises a complementary pair of transistors connected between first and second supply voltage references, and at least one PMOS pull-up transistor connected in series with an NMOS pull-down transistor. The stage comprises an additional PMOS transistor connected in parallel with the pull-up transistor and having the body terminal in common therewith. More particularly, the body terminals of both PMOS transistors are formed in the semiconductor within a common well which can withstand high voltages, and the additional transistor is a thick oxide PMOS power transistor.

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Cordenons, Italy

Enrico Scian