Massachusetts Institute of Technology

Nanyang Technological University

National University of Singapore

Eng Kian Kenneth Lee

Eugene A Fitzgerald

Li Hong Zhang

Kwang Hong Lee

Siau Ben Chiah

Soo Jin Chua

Chuan Seng Tan

Bing Wang

Jurgen Michel

Joseph Sylvester Chang

Wei Shu

Soo-Jin Chua

Li-Shiuan Peh

Yong Qu

Wenjia Zhang

Zhaomin Zhu

Viet Cuong Nguyen

Disclosed is a subpixel circuitcomprising: a first switching deviceresponsive to a digital periodic signal Vto provide a digital control signal Vrelating to a digital data signal V, the digital periodic signal Vdefining 2+1 time slots within each frame cycle, where N is a predetermined integer. The digital data signal Vhas a predetermined value at a predetermined one of the 2+1 time slots; and the subpixel circuitfurther comprises a second switching deviceresponsive to the control signal Vc to drive an associated light emitting element

Subpixel circuitry for driving an associated light element, and method, display system and electronic device relating to same

A method of forming a multilayer structure for a pixelated display and a multilayer structure for a pixelated display is provided. The method comprising providing a first wafer comprising first layers disposed over a first substrate, said first layers comprising non-silicon based semiconductor material for forming p-n junction LEDs (light emitting devices); providing a second partially processed wafer comprising silicon-based CMOS (Complementary Metal Oxide Semiconductor) devices formed in second layers disposed over a second substrate, said CMOS devices for controlling the LEDs; and bonding the first and second wafers to form a composite wafer via a double-bonding transfer process.

Method of forming a multilayer structure for a pixelated display and a multilayer structure for a pixelated display

A method of fabricating a device on a carrier substrate, and a device on a carrier substrate. The method comprises providing a first substrate; forming one or more device layers on the first substrate; bonding a second substrate to the device layers on a side thereof opposite to the first substrate; and removing the first substrate.

Fabrication of a device on a carrier substrate

A method of encapsulating a substrate is disclosed, in which the substrate has at least the following layers: a CMOS device layer, a layer of first semiconductor material different to silicon, and a layer of second semiconductor material, the layer of first semiconductor material arranged intermediate the CMOS device layer and the layer of second semiconductor material. The method comprises: (i) circumferentially removing a portion of the substrate at the edges; and (ii) depositing a dielectric material on the substrate to replace the portion removed at step (i) for encapsulating at least the CMOS device layer and the layer of first semiconductor material. A related substrate is also disclosed.

Method of encapsulating a substrate

A method of forming an integrated circuit is disclosed. The method includes: (i) forming at least a pair of optoelectronic devices from at least a first wafer material arranged on a semiconductor substrate, the first wafer material different to silicon; (ii) etching the first wafer material to form a first recess to be filled with a second material; (iii) processing the second material to form a waveguide for coupling the pair of optoelectronic devices to define an optical interconnect; and (iv) bonding at least one partially processed CMOS device layer having at least one transistor to the second semiconductor substrate to form the integrated circuit, the partially processed CMOS device layer arranged adjacent to the optical interconnect. An integrated circuit is also disclosed.

Method of forming an integrated circuit and related integrated circuit

A method of manufacturing a substrate is disclosed. The method comprises: providing a first semiconductor substrate, which includes an at least partially processed CMOS device layer and a layer of first wafer material; bonding a handle substrate to the partially processed CMOS device layer and removing the layer of first wafer material; providing a second semiconductor substrate having a layer of second wafer material which is different to silicon; bonding the first and second semiconductor substrates to form a combined substrate by bonding the layer of second wafer material to the partially processed CMOS device layer; and removing the handle substrate from the combined substrate to expose at least a portion of the partially processed CMOS device layer.

Method of manufacturing a substrate

A method () of forming an integrated circuit is disclosed. The method comprises: (i) forming at least a pair of optoelectronic devices from at least a first wafer material arranged on a semiconductor substrate, the first wafer material different to silicon; (ii) etching the first wafer material to form a first recess to be filled with a second material; (iii) processing () the second material to form a waveguide for coupling the pair of optoelectronic devices to define an optical interconnect; and (iv) bonding () at least one partially processed CMOS device layer having at least one transistor to the second semiconductor substrate to form the integrated circuit, the partially processed CMOS device layer arranged adjacent to the optical interconnect. An integrated circuit is also disclosed.

Growing community of inventors

Singapore, Singapore

Eng Kian Kenneth Lee