Abb Schweiz Ag

Abb Research Ltd.

Abb E-mobility B.v.

Enea Bianda

Frank Kassubek

Iulian Nistor

Jan Carstensen

Gerold Knapp

Richard Bloch

Vinoth Sundaramoorthy

Seila Rodriguez-Vilches

Torsten Votteler

Emmanouil Panousis

Franz Zurfluh

Angelos Garyfallos

Tin-Ho Li

Juha Huusari

Ngai-Man Ho

Alexander Heinemann

Gabriel Ortiz

A Dielectric Barrier Discharge system controller for controlling a fluid treatment by a Dielectric Barrier Discharge system is provided. Therein, the strength of an effect caused by a discharge created by the Dielectric Barrier Discharge system is monitored, and the generation of high-voltage pulses by the high-voltage pulse generator is controlled. The controlling of the generation of the high-voltage pulses is adapted based on the received sensor data.

Dielectric barrier discharge for ballast water treatment using optimized voltage shape control

A ballast water treatment apparatus and a ballast water treatment system having a ballast water treatment apparatus are provided. The ballast water treatment apparatus includes a ballast water transport line configured to transport ballast water between a first location and a second location, the transported ballast water being passed through at least one injector, and a plasma generation device configured to be fed with a feed gas optionally comprising oxygen, and configured to generate a feed gas plasma by a streamer type discharge in a discharge area to provide a treated gas at a treated-gas outlet. The injector includes a liquid passage having an area constructed such as to increase a velocity of the passed-through water in a region of increased velocity, and an injector gas inlet provided in the region of increased velocity. The treated-gas outlet is in gaseous connection with the injector gas inlet.

Ballast water treatment apparatus and ballast water treatment system

A full-bridge inverter based on a unipolar switching scheme includes a first branch and a second branch in parallel between a first DC node and a second node, the first branch including a first higher switch and a first lower switch in series, and the second branch including a second higher switch and a second lower switch in series. A filter circuit includes a first inductor and a second inductor. One pin of the first inductor is coupled with a first branch conductor, and the first branch conductor is coupled between the first higher switch and the first lower switch, and an opposite pin of the first inductor is electrically coupled with a first output node. One pin of the second inductor is coupled with a second branch conductor, the second branch conductor is coupled between the second higher switch and the second lower switch, and an opposite pin of the second inductor is coupled with a second output node of the full-bridge inverter. A first filtering unit switch, a first filter diode, a second filter diode and a second filtering unit switch in series are coupled between the first branch conductor and the second branch conductor, cathodes of the first diode and the second diode are coupled together. A cathode of a third filter diode is coupled with the first output node, and a cathode of a fourth filter diode is coupled with the second output node. The anodes of the third diode and the fourth diode are coupled together. A third inductor is coupled between the cathodes of the first diode and the second diode and the anodes of the third diode and the fourth diode.

Full-bridge inverter with unipolar switching scheme and its method of operation

The present invention relates to a method for determining an actual junction temperature (T) and/or an actual collector current (I) of an IGBT device, wherein the IGBT device has a main emitter (E) and an auxiliary emitter (E), comprising the steps of;

Method and apparatus for determining an actual junction temperature of an IGBT device

A system and method are provided for monitoring in real time the operating state of an IGBT device, to determine a junction temperature and/or the remaining lifetime of an IGBT device. The system includes a differential unit configured to receive a gate-emitter voltage characteristic of the IGBT device to be measured and to differentiate the gate-emitter voltage characteristic to obtain pulses correlating with edges formed by a Miller plateau phase during a switch-off phase of the IGBT device. The system also includes a timer unit configured to measure the time delay between the obtained pulses indicating the start and end of the Miller plateau phase during the switch-off phase of the IGBT device, and a junction temperature calculation unit configured to determine at least one of the junction temperature of the IGBT device and/or the remaining lifetime of the IGBT device based on the measured time delay.

System and method for monitoring in real time the operating state of an IGBT device

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Baden, Switzerland

Enea Bianda