Koha Co., Ltd.

National Institute for Materials Science

Waseda University

Tamura Corporation

Toyoda Gosei Co., Ltd.

Sakai Chemical Industry Co., Ltd.

Encarnacion Antonia Garcia Villora

Kiyoshi Shimamura

Kazuo Aoki

Noboru Ichinose

Yukio Kaneko

Daisuke Inomata

Yusuke Arai

Hiroaki Sano

Seitaro Yoshida

Makoto Watanabe

Naoki Shibata

Kenji Kitamura

Yoshihiro Yamashita

Naoki Ohashi

Koji Hirata

Yasuhisa Ushida

Yuhei Ikemoto

Yasuhiko Kuwano

Isao Sakaguchi

Hiroyuki Sawano

Daisuke Shinoda

Yoshihiro Irokawa

Daisuke Yamazaki

Rikiya Suzuki

K Kagami Memorial Lab For Materials Shimamura

Noboru School Of Science & Engineering Ichinose

A wavelength conversion member includes a sintered body of a phosphor. An average diameter of pores in an arbitrary cross section falls within a range of not less than 0.28 μm and not more than 0.98 μm. A ratio of an area of pores to a whole area in an arbitrary cross section falls within a range of not less than 0.04% and not more than 2.7%. An average diameter of grains of the phosphor in an arbitrary cross section falls within a range of not less than 1 μm and not more than 3 μm.

Wavelength conversion member

Provided is a particulate phosphor including a single crystal having a composition represented by a compositional formula (YLuGdCe)AlO(0&#x2264;x&#x2264;0.9994, 0&#x2264;y&#x2264;0.0669, 0.001&#x2264;z&#x2264;0.004, &#x2212;0.016&#x2264;a&#x2264;0.315) and a particle diameter (D50) of not less than 20 &#x3bc;m. Also provided is a light-emitting device including a phosphor-including member that includes the phosphor and a sealing member including a transparent inorganic material sealing the phosphor or a binder including an inorganic material binding particles of the phosphor, and a light-emitting element that emits a blue light for exciting the phosphor.

Phosphor and production method thereof phosphor-including member, and light emitting device or projector

A phosphor-containing member includes a transparent member, and a plurality of granular single crystal phosphors dispersed in the transparent member. Each of the plurality of granular single crystal phosphors includes a YAG crystal as a mother crystal. The plurality of granular single crystal phosphors are prepared by crushing the YAG crystal. The YAG crystal has a composition represented by a formula of YGdCeAlO(0.03&#x2264;x&#x2264;0.2, 0.003&#x2264;y&#x2264;0.2, &#x2212;0.2&#x2264;w&#x2264;0.2). Reduction of fluorescence intensity of the phosphors is less than 3% when an excitation light wavelength is 460 nm and a temperature is increased from 25&#xb0; C. to 100&#xb0; C.

Phosphor, method for manufacturing same, and light-emitting device

A piezoelectric material for a combustion pressure sensor, a method for producing the piezoelectric material, and a combustion pressure sensor using the piezoelectric material are provided. The piezoelectric material of the present invention includes a single crystal containing Ca, Ta, an element M (M is Al or Ga), Si, and O, the single crystal has the same crystal structure as the crystal structure of langasite represented by LaGaSiO, and at least the content of the element M is insufficient for the stoichiometric composition represented by CaTaMSiO. Preferably, in a case where the element M is Ga, each content of the Ca and the Si is excessive for the stoichiometric composition, and in a case where the element M is Al, the content of the Ca is excessive for the stoichiometric composition, and the content of the Ta is insufficient for the stoichiometric composition.

Piezoelectric material, method for producing the same, piezoelectric element and combustion pressure sensor

According to one embodiment of the present invention, the light emitting device includes an LED element, a side wall which surrounds the LED element, a phosphor layer which is fixed to the side wall with an adhesive layer therebetween, and is positioned above the LED element, and a metal pad as a heat dissipating member. The side wall includes an insulating base which surrounds the LED element and a metal layer which is formed on a side surface at the LED element side of the base, and is in contact with the metal pad and the adhesive layer. The adhesive layer includes a resin layer that includes a resin containing particles which have higher thermal conductivity than the resin or a layer that includes solder.

Light emitting device

An optical material used in a UV-excited yellow light-emitting material and an optical isolator, capable of emitting yellow light stably and highly efficiently even if a large current is fed to obtain the high luminance emission. The optical material used for the UV-excited yellow light-emitting material () and the optical isolator () is an oxide containing Ce, which is a terbium cerium aluminum garnet type single crystal wherein a part of terbium of a terbium aluminum garnet type single crystal is substituted by cerium. The ratio of number of moles of cerium to the total number of moles of terbium and cerium, namely the composition ratio of cerium, preferably falls within the range from 0.01 mol % to 50 mol %. A part of aluminum may be substituted by scandium or further by any one of terbium, cerium, yttrium, lutetium, ytterbium, and thulium.

Optical material used in light-emitting device, optical isolator, and optical processing apparatus, and manufacturing method thereof

A UV photoexcited red light-emitting material comprising a fluoride single crystal represented by the chemical formula: MREF, wherein M is at least one metal element belonging to Group 2 of the Periodic Table selected from the group consisting of Be, Mg, Ca, Sr, and Ba, RE is a rare earth element, and the relationships: 0&#x3c;x&#x2266;0.4 and 0&#x2266;w&#x2266;0.5 are satisfied.

UV photoexcited red light-emitting material and light emitting apparatus

An AlN single crystal Schottky barrier diode including: an AlN single crystal substrate having a defect density of 10cmor less and a thickness of 300 &#x3bc;m or more; a first electrode formed on one surface of the AlN single crystal substrate; and a second electrode formed on one surface of the AlN single crystal substrate while being spaced apart from the first electrode, the AlN single crystal Schottky barrier diode being provided with: a rectifying property such that an on-off ratio at the time of applying 10 V and &#x2212;40 V is at least 10even at a high temperature of 573 K; a high voltage resistance such that a voltage can be applied at least within a range of &#x2212;40 V to 10 V; and a low on-resistance characteristic such that a current begins to flow at no greater than 5 V.

AlN single crystal Schottky barrier diode and method of producing the same

A light emitting element that includes a GaOsubstrate; an AlGaN buffer layer (0&#x2266;&#xd7;&#x2266;1) formed on the GaOsubstrate; an n-GaN layer formed on the AlGaN buffer layer; an p-GaN layer formed on a portion of the n-GaN layer; an n-electrode formed on a portion of the n-GaN layer; and an p-electrode formed on the p-GaN layer.

Light emitting element and method of making same

A garnet-type single crystal is represented by a general formula, ABCO(having a crystal structure with three sites A, B and C occupied by cations, wherein A represents an element occupying the site A, B represents an element occupying the site B, C represents an element occupying the site C, O represents an oxygen atom), and contains fluorine, in which the fluorine attains any one or both of substituting for the oxygen atom or compensating for oxygen defect.

Garnet-type single crystal, optics using same and related apparatus thereof

A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlInGa)Owhere 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1 and 0&#x2266;x+y&#x2266;1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.

An object of the invention is to provide an iodide single crystal material that provides a scintillator material for the next-generation TOF-PET, and a production process for high-quality iodide single crystal materials. The iodide single crystal material of the invention having the same crystal structure as LuIand activated by a luminescence center RE where RE is at least one element selected from the group consisting of Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb is characterized in that a part or the whole of lutetium (Lu) in said iodide single crystal material is substituted by Y and/or Gd. The inventive production process for an iodide single crystal material is characterized by comprising a step of preparing starting materials comprising an RE metal or REI, I, and a metal of at least one element selected from the group consisting of Lu, Y and Gd and/or its iodide provided that when only Lu is selected, there is a Lu metal chosen; a step of maintaining said starting materials under vacuum; a step of heating said starting materials at a reaction temperature to create a raw polycrystal material containing at least XI:RE where X is said at least one selected element; and a step of turning said raw polycrystal material into a single crystal.

Iodide single crystal, production process thereof, and scintillator comprising iodide single crystal

A method of growing a p-type thin film of &#x3b2;-GaOincludes preparing a substrate including a &#x3b2;-GaOsingle crystal, and growing a p-type thin film of &#x3b2;-GaOon the substrate. The p-type thin film is grown in a manner that Ga in the thin film is replaced by a p-type dopant selected from H, Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, Ra, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au, Zn, Cd, Hg, Tl, and Pb.

[object Object]

A light-emitting element includes a &#x3b2;-GaOsubstrate, a GaN-based semiconductor layer formed on the &#x3b2;-GaOsubstrate, and a double-hetero light-emitting layer formed on the GaN-based semiconductor layer.

Growing community of inventors

Tokyo, Japan

Encarnacion Antonia Garcia Villora