Hkc Corporation Limited

Chongqing Hkc Optoelectronics Technology Co., Ltd.

Beihai Hkc Optoelectronics Technology Co., Ltd.

Chuzhou Hkc Optoelectronics Technology Co., Ltd.

Hkc Corporation Limited Chongqing Hkc Optoelectronics Technology Co., Ltd.

Hkc Corporation Limtted

En-Tsung Cho

Fengyun Yang

Yuming Xia

Yiqun Tian

Hejing Zhang

Qionghua Mo

Kun Fan

Zhen Liu

Haijiang Yuan

Chongwei Tang

Wanfei Yong

Kaijun Liu

Yong Zhang

Lidan Ye

Je-hao Hsu

Feng Yun Yang

Chao Wei

Xia Yuming

A display device and a touch controller are disclosed. The display device includes a protective screen, a display panel, a photosensitive element, and a light-concentrating element. The protective screen is arranged on a light-emitting surface of the display device. The photosensitive element is arranged between the display panel and the protective screen. The photosensitive element includes a photosensitive surface that receives light, and a light-concentrating element is arranged on the photosensitive surface of the photosensitive element.

Display device and touch controller

A method of manufacturing a thin film transistor and a display device are disclosed. The method includes: forming a gate metal layer, a gate insulating layer, an active layer, an ohmic contact layer sequentially on a substrate; producing a photoresist layer on the metal layer where the portion of the photoresist layer at the channel region has a smaller thickness than other portions; a first wet etching in which the metal layer corresponding to the photoresist layer is obtained; a first drying etching in which the active layer and ohmic contact layer corresponding to the photoresist layer are Obtained; a second wet etching in which the portion of the metal layer corresponding to the channel region removed; and a second dry etching in which the portion of the active layer corresponding to the channel region is made to have a smaller thickness than other portions of the active layer.

Method of manufacturing thin film transistor and display device

A method for manufacturing a data line includes: forming a conductive layer on a substrate; forming a photoresist layer on a side of the conductive layer away from the substrate; exposing and then developing the photoresist layer to form a groove penetrating the photoresist layer, thus obtaining a patterned photoresist layer; and depositing a functional material electrochemically on the patterned photoresist layer, then removing the patterned photoresist layer to obtain the conductive layer with the patterned functional material layer, thereby obtaining the data line.

Method for manufacturing data line, method for manufacturing array substrate and display device

This application discloses a photoreceptor, a panel, and a method for manufacturing a photoreceptor. The photoreceptor includes a photosensitive layer. The photosensitive layer includes a subject entity including a plurality of holes, and an object entity including at least two photosensitive materials whose photosensitive wavelength bands are different. The holes of the subject entity are filled with the photosensitive materials.

Photoreceptor, panel, and method for manufacturing photoreceptor

The present application discloses an array substrate, a manufacturing method therefor and a display panel. The manufacturing method for the array substrate includes steps of: forming a base layer; forming a semiconductor layer on the base layer; forming a metal layer on the semiconductor layer, where the upper surface of the metal layer contains a first nitride or a first oxide; etching the metal layer into a source/drain electrode; and forming a passivation layer on the source/drain electrode, where the passivation layer is a second nitride structure corresponding to the first nitride or a second oxide structure corresponding to the first oxide.

Array substrate, manufacturing method therefor and display panel

The present disclosure relates to a source-drain electrode and a method for manufacturing the same, an array substrate and a method for manufacturing the same, and a display mechanism. A method for manufacturing a source-drain electrode includes steps of: disposing a conductive layer on an underlay; forming a photoresist layer on a side of the conductive layer away from the underlay; exposing and then developing the photoresist layer to form grooves passing through the photoresist layer on the photoresist layer, so as to form a patterned photoresist layer; and electrochemically depositing a functional material on the patterned photoresist layer and then removing the photoresist layer to obtain the conductive layer on which a patterned layer is formed, so as to obtain the source-drain electrode. The source-drain electrode manufactured by the above method has a higher conductivity.

Method for manufacturing source-drain electrode, method for manufacturing array substrate, and display mechanism

The present disclosure relates to an insulation unit based on an array substrate and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display mechanism. The method for manufacturing the insulation unit based on the array substrate includes: providing an aluminum layer on a substrate; and anodizing the aluminum layer to oxidize the aluminum layer to form the insulation unit. The method for manufacturing the insulation unit based on the array substrate can manufacture an insulation unit with a better corrosion resistance.

Insulation unit based on array substrate and manufacturing method thereof, array substrate and manufacturing method thereof, and electronic device

Disclosed is a manufacture method of the array substrate, including: sequentially forming a gate, a gate insulating layer, an active layer, an ohmic contact layer and a metal layer on a substrate, forming a photoetching mask on the metal layer, where thickness of the photoetching mask in a half exposure area of the mask plate is from 2000 Å to 6000 Å; etching the metal layer, the ohmic contact layer and the active layer outside a covering area of the photoetching mask; ashing the photoetching mask for a preset time with an ashing reactant, wherein the ashing reactant comprises oxygen, and the preset time is from 70 seconds to 100 seconds; and sequentially etching the metal layer, the ohmic contact layer and the active layer based on the ashed photoetching mask, and forming a channel region of the array substrate. The present disclosure further discloses an array substrate, and a display panel.

Manufacture method of array substrate, array substrate, and display panel

The present disclosure provides a display panel and a manufacturing method for the display panel. The display panel includes a substrate, a switch assembly disposed on the substrate, and a light-sensing assembly disposed on a side of the switch assembly. The switch assembly comprises an indium gallium zinc oxide (IGZO) layer.

Display panel and manufacturing method thereof

This application discloses a display panel, a method for manufacturing a display panel, and a display device. The method includes steps of forming, in a display region of the display panel, a first active switch including a first semiconductor layer, and forming, in a non-display region of the display panel, a second active switch including a second semiconductor layer. A material of the first semiconductor layer formed is an oxide, a material of the second semiconductor layer formed is polysilicon, and the first semiconductor layer and the second semiconductor layer are formed on an identical layer.

Display panel, method for manufacturing display panel, and display device

The present application discloses a manufacturing method for a display panel and the display panel, and the manufacturing method includes a manufacture procedure of forming an array substrate, where the manufacture procedure of forming an array substrate includes: forming a buffer layer with a preset pattern on a glass substrate; placing the glass substrate with the buffer layer formed thereon into an electrochemical deposition device, and performing electrochemical deposition to form a copper alloy metal layer corresponding to the buffer layer; heating and annealing the copper alloy metal layer to form a first metal layer; sequentially forming an insulating layer, an active layer, a second metal layer, a passivation layer and a transparent electrode layer on the first metal layer, where the first metal layer includes a buffer layer and a copper alloy metal layer.

Manufacturing method for display panel and display panel

The present application discloses a test structure, a substrate and a method for manufacturing the substrate. The substrate includes a stacked substratum, a metal layer and an insulating layer; first via holes and second via holes disposed in different areas and passing through the insulating layer, and first transparent electrodes and second transparent electrodes disposed in different via holes and connected with the metal layer. The first via holes and the second via holes are formed through the same manufacture procedure, and the first transparent electrodes and the second transparent electrodes are formed through the same manufacture procedure.

Test structure, substrate and method for manufacturing substrate

A gate unit and a manufacturing method thereof, a method of manufacturing an array substrate, and a display mechanism are provided. The method of manufacturing a gate unit includes: providing a conductive layer on a substrate; forming a photoresist layer on a side of the conductive layer away from the substrate; exposing the photoresist layer, and then developing the photoresist layer to form a groove extending through the photoresist layer on the photoresist layer, so as to form the photoresist layer with a pattern; and electrochemically depositing a functional material on the photoresist layer with the pattern, and then removing the photoresist layer to obtain the conductive layer having a pattern layer formed thereon, so as to obtain the gate unit.

Gate unit and manufacturing method thereof, array substrate manufacturing method, and display mechanism

The present application discloses a display panel and method of manufacturing thereof. The display panel of the present application includes a substrate, an active switch, a color photoresist layer, a first electrode layer, a light emitting diode, a second electrode layer, an encapsulation layer and a driver circuit. The light emitting diode includes a red light emitting layer, a green light emitting layer and a blue light emitting layer which includes a silicon-germanium quantum dot material.

Display panel and method of manufacturing thereof

This application discloses a display panel, a method for manufacturing a display panel, and a display device. The display panel includes an organic electroluminescent device. The organic electroluminescent device includes an emission layer. The emission layer includes a main body made of mesoporous silica and a dopant made of an organic small molecule luminescent material. The dopant is arranged in the main body.

Display panel including an organic electroluminescent device where an organic small molecule luminescent material is disposed in a main body made of mesoporous silica, method for manufacturing the same, and display device

Growing community of inventors

Chongqing, China

En-Tsung Cho