Hitachi Global Storage Technologies Netherlands B.v.

Emo Hilbrand Klaassen

Richard Hsiao

Ian Robson McFadyen

James Devereaux Jarratt

Timothy J Moran

The present invention provides a method of manufacturing a magnetoresistive read head which reduces electrostatic discharge and allows measurement of gap resistances in the head.

Method of reducing ESD damage in thin film read heads which enables measurement of gap resistance

A first read gap layer has a resistance R between a first shield layer and one of the first and second lead layers of a read head and the second read gap layer has a resistance R between a second shield layer and said one of the first and second lead layers of the read head. A connection is provided via a plurality of resistors between a first node and each of the first and second shield layers wherein the plurality of resistors includes at least first and second resistors R and R and the first node is connected to said one of the first and second lead layers. A second node is located between the first and second resistors R and R . An operational amplifier has first and second inputs connected to the first and second nodes respectively so as to be across the first resistor R and has an output connected to the first node for maintaining the first and second nodes at a common voltage potential. In a first embodiment the first and second shield layers are shorted together. A test instrument is then employed for determining the combined parallel resistance of the resistors R and R by having a first side of the test instrument connected to the first node and the second side connected to each of the first and second shield layers. In the second embodiment a third resistor R is connected between the second node and one of the shield layers, such as the second shield layer. The test instrument can determine the resistances of the first and second gap layers separately by being connected between the first node and the first shield layer for the resistance of the first gap layer or between the first node and the second shield layer for the resistance of the second gap layer.

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Santa Clara, CA, United States of America

Emo Hilbrand Klaassen