Balzers Aktiengesellschaft

Unaxis-Balzers Aktiengesellschaft

Tel Solar Ag

Balzers Hochvakuum Ag

Emmanuel Turlot

Jacques Schmitt

Jean-Baptiste Chevrier

Jean Barreiro

Thierry Emeraud

Fran&ccedil;ois Leblanc

Hanh Pham

Philippe Grousset

Frangois Leblanc

A plasma reactor has a reactor vessel and a pair of electrodes in the form of spaced apart and oppositely disposed metallic surfaces defining therebetween a plasma discharge space. At least one of the metallic surfaces is the surface of a metallic plate having a plurality of gas feed openings extending through the metallic surface towards said discharge space and from a distribution chamber extending along the plate opposite the discharge space. The distribution chamber has a wall opposite and distant from the plate and includes a gas inlet arrangement with a plurality of gas inlet openings distributed along the wall and connected to one or more gas feed lines to the reactor. A gas flow resistant coefficient between the one or more gas feed lines and at least a predominant portion of the connected inlet openings are at least substantially equal.

RF plasma reactor having a distribution chamber with at least one grid

A ballast layer for a field emissive device includes a very thin layer of strongly doped nanocrystalline silicon and one or more moderately doped layers of an amorphous silicon-based material.

Ballast layer for field emissive device

Design of gas injection for the electrode in a capacitively coupled RF plasma reactor

A process for dry etching a surface within a vacuum treatment reactor includes evacuating the reactor, generating a glow discharge within said reactor, feeding a reactive etching gas into said reactor and reacting said etching gas within said reactor, removing gas with reaction products of said reacting from said reactor and installing an initial flow of said etching gas into said reactor and reducing said flow after a predetermined time span and during said reacting. The vacuum treatment reactor has a reactor with a pumping arrangement for evacuating the reactor. A glow discharge generating arrangement is connected to an electric power supply. A gas tank arrangement is connected to the reactor and has a reactive etching gas such as SF.sub.4.

Process for dry etching and vacuum treatment reactor

A method for monitoring the actual flow of a gas into a vacuum facility, which flow of gas resulting from setting a desired flow of gas by means of at least one adjustable mass flow controller, interconnected between said facility and a pressurized reservoir arrangement for said gas.

Method for monitoring the flow of a gas into a vacuum reactor

A field emission device has a basic substrate whose surface is coated with a conductive layer that forms an electrode. A field emission emitter which is formed as a micro-tip, is electrically connected to the electrode. Between the micro-tip and the electrode, a current limiting resistive silicon film is arranged and the resistivity of the silicon film is adjusted to be in a value ranging from about 10.sup.2 to about 10.sup.5 .OMEGA.cm by an n- or p-dopant. The silicon film contains an alloying element which would be able to form a silicon ceramic if used in a stoichiometric amount but would not be able to dope the silicon.

Field emission device

An apparatus for plasma treating workpieces in vacuum includes a stack of plasma chambers (20). Handling of workpieces to and from the plasma chambers of the stack is performed in parallelism by one handling device and through lateral handling openings of the plasma chambers. The handling device is rotatable around an axis parallel to the handling openings of the plasma chambers and comprises transport apparatus simultaneously movable radially with respect to the axis of rotation towards and from the handling openings.

Growing community of inventors

Villebon sur Yvette, France

Emmanuel Turlot