Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Soitec

Emmanuel Rolland

Patrick Reynaud

Shay Reboh

Walter Schwarzenbach

Emmanuel Augendre

Xavier Baillin

Frédéric Allibert

Gweltaz Gaudin

Frédéric Gaillard

Julie Widiez

Emmanuel Ollier

Pierre Jean Ribeyron

Aurelie Thuaire

Pablo Acosta Alba

Pierre Imperinetti

Patrick Leduc

Agnès Arnaud

Alexis Drouin

Christelle Veytizou

Isabelle Bertrand

Ulrich Soupremanien

Amandine Jouve

Thomas Lorne

Corentin Carmignani

Séverin Rouchier

Christophe Brun

Aurélie Thuaire

A semiconductor structure for radio frequency applications includes a support substrate made of silicon and comprising a mesoporous layer, a dielectric layer arranged on the mesoporous layer and a superficial layer arranged on the dielectric layer. The mesoporous layer comprises hollow pores, the internal walls of which are mainly lined with oxide. The mesoporous layer has a thickness between 3 and 40 microns and a resistivity greater than 20 kohm·cm over its entire thickness. The support substrate has a resistivity between 0.5 and 4 ohm·cm. The invention also relates to a method for producing such a semiconductor structure.

Semiconductor structure comprising a buried porous layer for RF applications

Producing a semiconductor or piezoelectric on-insulator type substrate for RF applications which is provided with a porous layer under the BOX layer and under a layer of polycrystalline semiconductor material.

RF substrate structure and method of production

Production of a device for connecting a nano-object to an external electrical system (SEE) including:

Device for connecting at least one nano-object associated with a chip enabling a connection to at least one external electrical system and method of fabrication thereof

Manufacturing of a device to connect at least one nano-object to an external electrical system, comprising a support provided with a semiconducting layer in which the first doped zones are formed at a spacing from each other, an external electrical system being connectable to the first doped zones, each first doped zone (8, 8) being in contact with a second doped zone on which a portion of the nano-object is located, the second doped zones being separated from each other and with a thickness less than the thickness of the first doped zones.

Device for connecting at least one nano-object and method of manufacturing it

An electronic device for measuring at least one electrical characteristic of an object, including a supporting base provided with at least two measuring units each including at least two sets of electrodes including electrodes, is provided. The electrodes of the sets of electrodes of the same measuring unit are interdigitated such that each electrode of one of the sets of electrodes of the measuring unit is spaced by an inter-electrode distance from an electrode, of the other of the sets of electrodes of the measuring unit, which is adjacent thereto, the electrodes differ in the features in respect of contact with the object and/or the electrode spacing thereof so as to make a differential current measurement.

Electronical device for measuring at least one electrical characteristic of an object

A bolometric detector includes a substrate; bolometric detection microbridges suspended above the substrate and thermally insulated from the substrate; bolometric compensation microbridges suspended above the substrate and thermalized to the substrate; and a read circuit formed in the substrate to apply a biasing to the detection microbridges and to the compensation microbridges and to form differences between signals generated by detection microbridges and signals generated by compensation microbridges under the effect of the applied biasing. Each detection microbridge and each compensation microbridge includes electrically-conductive anchoring nails connected to the read circuit, a membrane attached to the anchoring nails above the substrate, and a thermometric element arranged in the membrane. The detector further includes thermal short-circuit elements between the membrane of each compensation microbridge and the substrate.

Bolometric detector with a compensation bolometer having an enhanced thermalization

A method for metallization of a semiconductor device. This method includes a) metallizing a set of collection fingers with a low-temperature serigraphy paste on at least a front surface of the semiconductor device, b) sintering, at a temperature below a temperature that would damage the semiconductor device, the serigraphy paste forming the set of metallized collection fingers, by performing a pressing operation on the collection fingers with a press, and c) metallizing at least one collection bus on the set of metallized collection fingers, electrically connecting the collection fingers to one another, with a low-temperature serigraphy paste.

Method for metallization of a semiconductor device

A method of forming contacts between at least one metallic layer and at least one semiconductor substrate through at least one layer of dielectric in a semiconductor device. The semiconductor device includes, on at least one base face of the semiconductor substrate, the dielectric layer. The metallic layer is stacked on the dielectric layer. The heated ends of plural protruding elements assembled on a support are brought into contact with the metallic layer simultaneously, thereby creating zones of melted metal under the heated ends of the protruding elements. The melted metal traverses the dielectric and amalgamates with the semiconductor of the substrate at the level of the zones of melted metal, thereby creating the contacts.

Method for producing metal/semiconductor contacts through a dielectric

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Jarrie, France

Emmanuel Rolland