Silicon Laboratories Inc.

Semiconductor Manufacturing International (shanghai) Corporation

Silicon Clocks, Inc.

University of California

Probiusdx, Inc.

Silicon Labs Sc, Inc.

Emmanuel Philippe Quevy

Roger T Howe

David H Bernstein

Mehrnaz Motiee

Pezhman Monadgemi

Jeremy R Hui

Carrie Wing-Zin Low

Daniel N Koury, Jr

Manu Seth

Richard Steven Miller

Zhen Gu

Andrew D McCraith

Carrie W Low

Tsu-Jae King

Hideki Takeuchi

Aaron J Caffee

Louis J Nervegna

Chaitanya Gupta

Jeremy Hui

Jeremy Ryan Hui

Brian G Drost

Qing Gan

David A Bernstein

An all-electronic high-throughput detection system can perform multiple detections of one or more analyte in parallel. The detection system is modular, and can be easily integrated with existing microtiter plate technologies, automated test equipments and lab workflows (e.g., sample handling/distribution systems). The detection system includes multiple sensing modules that can perform separate analyte detection. A sensing module includes a platform configured to couple to a sample well. The sensing module also includes a sensor coupled to the platform. The sensing module further includes a first electrode coupled to the platform. The first electrode is configured to electrically connect with the sensor via a feedback circuit. The feedback circuit is configured to provide a feedback signal via the first electrode to a sample received in the sample well, the feedback signal based on a potential of the received sample detected via a second electrode.

All-electronic high-throughput analyte detection system

Methods and structures that may be implemented in one example to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) such as sensors and actuators. For example, structures having varying characteristics may be fabricated using the same basic process flow by selecting among different process options or modules for use with the basic process flow in order to create the desired structure/s. Various process flow sequences as well as a variety of device design structures may be advantageously enabled by the various disclosed process flow sequences.

Methods and structures for thin-film encapsulation and co-integration of same with microelectronic devices and microelectromechanical systems (MEMS)

Membrane transducer structures and thin-film encapsulation methods for manufacturing the same are provided. In one example, the thin film encapsulation methods may be implemented to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) that include the membrane transducers.

Membrane transducer structures and methods of manufacturing same using thin-film encapsulation

Trapped sacrificial structures and thin-film encapsulation methods that may be implemented to manufacture trapped sacrificial structures such as relative humidity sensor structures, and spacer structures that protect adjacent semiconductor structures extending above a semiconductor die substrate from being contacted by a molding tool or other semiconductor processing tool in an area of a die substrate adjacent the spacer structures.

Trapped sacrificial structures and methods of manufacturing same using thin-film encapsulation

A microelectromechanical system (MEMS) device includes a temperature compensating structure including a first beam suspended from a substrate and a second beam suspended from the substrate. The first beam is formed from a first material having a first Young's modulus temperature coefficient. The second beam is formed from a second material having a second Young's modulus temperature coefficient. The body may include a routing spring suspended from the substrate. The routing spring may be coupled to the first beam and the second beam. The routing spring may be formed from the second material. The first beam and the second beam may have lower spring compliance than the routing spring. The MEMS device may be a resonator and the temperature compensating structure may have dimensions and a location such that the temperature compensation structure modifies a temperature coefficient of frequency of the resonator independent of a mode shape of the resonator.

Temperature compensation for MEMS devices

Methods of forming MEMS resonators containing a first structural material and a second structural material to tailor the resonator's temperature coefficient of frequency (TCF). The first structural material has a different Young's modulus temperature coefficient than the second structural material. In one embodiment, the first structural material may be formed on substrate and patterned, and the second structural material may be formed over the first structural material and planarized to expose the first structural material. A resonator may be patterned that contains both the first and second structural materials.

Method for temperature compensation in MEMS resonators with isolated regions of distinct material

A technique decouples a MEMS device from sources of strain by forming a MEMS structure with suspended electrodes that are mechanically anchored in a manner that reduces or eliminates transfer of strain from the substrate into the structure, or transfers strain to electrodes and body so that a transducer is strain-tolerant. The technique includes using an electrically insulating material embedded in a conductive structural material for mechanical coupling and electrical isolation.

Monolithic body MEMS devices

An apparatus is formed on a substrate including at least one semiconductor device. The apparatus includes a microelectromechanical system (MEMS) device comprising at least one of a portion of a first structural layer and a portion of a second structural layer formed above the first structural layer. The second structural layer has a thickness substantially greater than a thickness of the first structural layer. In at least one embodiment, the MEMS device includes a first portion of the second structural layer and a second portion of the second structural layer. In at least one embodiment, the MEMS device further comprises a gap between the first portion of the second structural layer and the second portion of the second structural layer. In at least one embodiment, the gap has a width at least one order of magnitude less than the thickness of the second structural layer.

Technique for forming a MEMS device

A technique decouples a MEMS device from sources of strain by forming a MEMS structure with suspended electrodes that are mechanically anchored in a manner that reduces or eliminates transfer of strain from the substrate into the structure, or transfers strain to electrodes and body so that a transducer is strain-tolerant. The technique includes using an electrically insulating material embedded in a conductive structural material for mechanical coupling and electrical isolation. An apparatus includes a MEMS device including a first electrode and a second electrode, and a body suspended from a substrate of the MEMS device. The body and the first electrode form a first electrostatic transducer. The body and the second electrode form a second electrostatic transducer. The apparatus includes a suspended passive element mechanically coupled to the body and electrically isolated from the body.

Suspended passive element for MEMS devices

A technique for forming an encapsulated microelectromechanical system (MEMS) device includes forming an integrated circuit using a substrate, forming a barrier using the substrate, and forming a MEMS device using the substrate. The method includes encapsulating the MEMS device in a cavity. The barrier is disposed between the integrated circuit and the cavity and inhibits the integrated circuit from outgassing into the cavity. The barrier may be substantially impermeable to gas migration from the integrated circuit.

Gas-diffusion barriers for MEMS encapsulation

A method of operating a system including a MEMS device of an integrated circuit die includes generating an indicator of a device parameter of the MEMS device in a first mode of operating the system using a monitor structure formed using a MEMS structural layer of the integrated circuit die. The method includes generating, using a CMOS device of the integrated circuit die, a signal indicative of the device parameter and based on the indicator. The device parameter may be a geometric dimension of the MEMS device. The method may include, in a second mode of operating the system, compensating for a difference between a value of the signal and a target value of the signal. The method may include re-generating the indicator after exposing the MEMS device to stress and generating a second signal indicating a change in the device parameter.

Growing community of inventors

El Cerrito, CA, United States of America

Emmanuel Philippe Quevy