Veeco Instruments Inc.

Sensor Electronic Technology, Inc.

Seoul Viosys Co., Ltd.

Emmanuel N Lakios

Alan V Hayes

Boris L Druz

Victor Kanarov

Michael Shur

Alexander Dobrinsky

Viktor Kanarov

Roger P Fremgen, Jr

Abraham J Navy

John Jacob

Genrikh Treyger

Edward W Ostan

Salvatore A DiStefano

Maxim S Shatalov

Timothy James Bettles

Mikhail Gaevski

Igor Agafonov

Robert Mark Kennedy

Adrian J Devasahayam

Alex Dobrinsky

Michael F McGraw

Hariharakeshave S Hegde

Max Shatalov

Hari Hedge

An ultraviolet razor blade treatment system for providing a cleaning treatment to a shaving razor is disclosed. The ultraviolet razor blade treatment system can include a shaving razor cleaning unit that has at least one ultraviolet radiation source and sensor to clean surfaces of the shaving razor for purposes of disinfection, sterilization, and/or sanitization.

Ultraviolet razor blade treatment

A diffusive ultraviolet illuminator is provided. The illuminator can include a reflective mirror and a set of ultraviolet radiation sources located within a proximity of the focus point of the reflective mirror. The ultraviolet radiation from the set of ultraviolet radiation sources is directed towards a reflective surface located adjacent to the illuminator. The reflective surface can diffusively reflect at least 30% the ultraviolet radiation and the diffusive ultraviolet radiation can be within at least 40% of Lambertian distribution. A set of optical elements can be located between the illuminator and the reflective surface in order to direct the ultraviolet radiation towards at least 50% of the reflective surface.

Ultraviolet surface illumination system

A tanning or a phototherapy system including a light source including light emitting elements configured to emit ultraviolet (UV) light having different peak wavelengths, a controller configured to control luminous characteristics of the light source, and a sensor configured to sense at least one of the luminous characteristics of the light source and a user's skin condition, in which the luminous characteristics of the light source are controlled by the controller based on the user's skin condition sensed by the sensor, and controlling the luminous characteristics comprises increasing or decreasing luminous intensity of one or more of the light emitting elements.

Skin tanning and phototherapy system and apparatus

A metal-organic chemical vapor deposition (MOCVD) growth with temperature controlled layer is described. A substrate or susceptor can have a temperature controlled layer formed thereon to adjust the temperature uniformity of a MOCVD growth process used to epitaxially grow semiconductor layers. In one embodiment, the substrate and/or the susceptor can be profiled with a shape that improves temperature uniformity during the MOCVD growth process. The profiled shape can be formed with material that provides a desired temperature distribution to the substrate that is in accordance with a predetermined temperature profile for the substrate for a particular MOCVD process.

Material growth with temperature controlled layer

Method and apparatus for processing a substrate with a beam of energetic particles. The beam is directed from a source through a rectangular aperture in a shield positioned between the source and substrate to a treatment zone in a plane of substrate movement. Features on the substrate are aligned parallel to a major dimension of the rectangular aperture and the substrate is moved orthogonally to the aperture's major dimension. The beam impinges the substrate through the aperture during movement. The substrate may be periodically rotated by approximately 180&#xb0; to reorient the features relative to the major dimension of the rectangular aperture. The resulting treatment profile is symmetrical about the sides of the features oriented toward the major dimension of the rectangular aperture.

Method and apparatus for surface processing of a substrate

A deposition system includes a substrate holder supporting a substrate defining at least one topographical feature. In addition, the system includes a deposition plume that is directed toward the substrate. A first profiler mask is positioned between the deposition plume and the substrate, and is shaped so as to reduce inboard/outboard asymmetry in a deposition profile associated with the feature.

Method and apparatus for controlling film profiles on topographic features

A control system and process for operating a charged-particle source which achieves gating of the charged-particle beam without a mechanical shutter and with very short transition between the beam &ldquo;on&rdquo; and beam &ldquo;off&rdquo; states is presented. The process and control system provide very precise control of the duration of the charged-particle extraction.

Charged-particle source, control system and process using gating to extract the charged particle beam

A charged particle source includes a vessel defining an interior for containing a plasma, the vessel having an inlet communicating with the interior of the vessel and connected to a source of atoms, and an aperture through which a charged particle beam is discharged, an energy generator for communicating with the atoms in the interior of the vessel and effecting ionization of the atoms in the vessel and creating the plasma, an electrode assembly disposed in the interior of the vessel, the electrode assembly including a conductive electrode support member, a tray member associated with the support member, a conductive liquid disposed in the tray member, the liquid having a surface area and a conductor connected between the conductive liquid and a voltage source, and an ion optics assembly disposed adjacent the vessel for accelerating plasma-generated charged particles having the same polarity as the conductive liquid in the vessel while maintaining charged particles of the opposite polarity within the vessel.

Charged particle source with liquid electrode

A control system and process for operating a charged-particle source which achieves gating of the charged-particle beam without a mechanical shutter and with very short transition between the beam 'on' and beam 'off' states is presented. The process and control system provide very precise control of the duration of the charged-particle extraction.

Charged-particle source, control system, and process using gating to

A charged particle source applicable for etching, thin film deposition, or surface modification includes a conductive electrode for controlling the plasma potential and beam voltage, the electrode retaining long term conductivity during operation, such as by shielding or in situ cleaning during operation, and/or by being operated in pulse mode conditions capable of preventing charge accumulation in the source during ion extraction.

Charged particle source

A loading station receives a substrate into a load-lock volume pressure isolated from a loading station chamber which is open to a processing chamber. The volume is evacuated and the substrate lowered into the loading chamber. A transport arm moves the substrate from the loading station to a substrate carrier of a cooling fixture within the processing chamber. The carrier is connected to a clamp which together move vertically downward to lower the wafer onto a substrate seat of the fixture. During substrate processing the fixture is tiltable and rotatable and provides substrate cooling by solid-to-solid conduction, forced convection and free convection. Solid-to-solid conduction is provided by the clamp. The substrate is pressed to the fixture by the cooling clamp having a circulating cooling fluid. Forced convection is provided by a gas flowing into the microscopic areas between the substrate and the fixture at a pressure high enough to cause bowing or lifting of the substrate and thus to create a gas region between the substrate and the fixture. An O-ring provides a seal under the pressure of the clamps near the periphery of the substrate to substantially seal the gas from entering the processing chamber. The gas flows into and through the gas region absorbing heat energy from the back surface of the substrate and flowing out of the region. Free convection is provided by heat transfer between the substrate and the substrate seat. The pressure in the gas region is high enough that the mean free path of the gas molecules is less then the distance between the substrate and the fixture. As a result gas molecules absorb energy from the substrate and intermix and transfer energy with other molecules. Some molecules collide with the substrate seat and transfer heat energy to the seat. After substrate treatment the gas is evacuated from behind the substrate prior to release of the clamps.

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Mt. Sinai, NY, United States of America

Emmanuel N Lakios