Koninklijke Philips Corporation N.v.

Philips Semiconductors Inc.

Emmanuel Demuizon

Subhas Bothra

Stephen L Skala

Steven L Skala

Metal bond pads are formed over active circuitry in a semiconductor chip in a reliable and cost effective manner. According to an example embodiment of the present invention, a metal bond pad is formed over circuitry in the semiconductor chip. A metal layer is formed over the circuitry and the metal bond pad, and a diffusion barrier layer is formed between the metal layer and the metal bond pad. In this manner, additional metal can be formed on the pad site using only one additional mask step, and thicker metal at the pad site improves the reliability of the chip by providing for a metal cushion at the pad useful in subsequent wire bonding processes.

Pad metallization over active circuitry

Metal bond pads are formed over active circuitry in a semiconductor chip in a reliable and cost effective manner. According to an example embodiment of the present invention, a metal bond pad is formed over circuitry in the semiconductor chip. A metal layer is formed over the circuitry and the metal bond pad, and a photoresist mask is patterned over the metal layer. The metal layer is etched and the portion of the metal layer not masked with the photoresist is removed. In this manner, additional metal can be formed on the pad site using only one additional mask step, and the thicker metal at the pad site improves the reliability of the chip by providing for a metal cushion at the pad useful in subsequent wire bonding processes.

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Fremont, CA, United States of America

Emmanuel Demuizon