Primo1d

S.o.i.tec Silicon on Insulator Technologies

Soitec

S.o.i. Tec Silicon on Insulator Technologies, S.a.

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Emmanuel Arene

Bruno Ghyselen

Carlos Mazure

Jean Brun

Christopher Mackanic

Robin Lethiecq

Pavina Nguyen

Gianfranco Andia Vera

Eric Neyret

Ludovic Ecarnot

Mathilde Cartier

Delphine Rolland

Pierre Descours

Julie Haguet

A system for inserting a wire into a semiconductor chip system includes positioning members for deploying and moving a length of the wire between a first end and a second end of a workspace. A handling device of the system is configured to handle the semiconductor chip, and is capable of placing the chip in an insertion position in which a groove of the chip is placed opposite the wire. A positioning member of the system is configured to arrange a longitudinal section of the wire along the groove, in forced abutment against a pad of the chip made of a bonding material having a melting point. A heating member of the system is configured to heat a zone comprising the pad to a processing temperature above the melting point to melt the pad and provoke insertion of the wire into the groove.

System for inserting a wire into a semiconductor chip

A radiofrequency transmission/reception device includes a first and a second conductive wire element, a first far-field transmission/reception chip and a second near-field transmission/reception chip. The first and the second wire element combine with the characteristic impedance of the second transmission/reception chip in order to form a coupling device associated with the first transmission/reception chip at the operating frequency of the first chip. The first and the second wire element combine with the characteristic impedance of the first transmission/reception chip in order to form a coupling device associated with the second transmission/reception chip at the operating frequency of the second chip.

Radiofrequency transmission/reception device

A method for inserting a wire into a longitudinal groove of a semiconductor chip for the assembly thereof, the groove containing a pad made of a bonding material having a set melting point, comprises: in a positioning step, placing a longitudinal section of the wire along the groove, in forced abutment against the pad; and, in an insertion step, exposing a zone containing at least one portion of the pad to a processing temperature higher than the melting point of the bonding material and for a sufficient time to make the pad at least partially melt, and causing the wire to be inserted into the groove. The present disclosure also relates to a piece of equipment allowing the insertion method to be implemented.

Method for inserting a wire into a groove of a semiconductor chip

A method for joining a microelectronic chip to at least one wire element comprises a first step of applying a cover to a first face of the microelectronic chip, the cover being configured to form, with the first face, at least one temporary side groove. The method additionally comprises a step of inserting the wire element into the temporary groove. The method further comprises a step of attaching the wire element to the microelectronic chip. The method additionally comprises a step of removing the cover from the microelectronic chip.

Method for joining a micorelectronic chip to a wire element

A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on the stressed layer; removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate material; patterning the stressed layer; and heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer and form the relaxed or pseudo-relaxed layer of the structure.

Forming structures that include a relaxed or pseudo-relaxed layer on a substrate

A method for reducing the roughness of a free surface of a semiconductor wafer that includes establishing a first atmosphere in an annealing chamber, replacing the first atmosphere with a second atmosphere that includes a gas selected to and in an amount to substantially eliminate or reduce pollutants on a wafer, and exposing the free surface of the wafer to the second atmosphere to substantially eliminate or reduce pollutants thereon. The second atmosphere is then replaced with a third atmosphere that includes pure, and rapid thermal annealing is performed on the wafer exposed to the third atmosphere in the annealing chamber to substantially reduce the roughness of the free surface of the wafer.

Method of reducing the surface roughness of a semiconductor wafer

A method for forming a relaxed or pseudo-relaxed useful layer on a substrate is described. The method includes growing a strained semiconductor layer on a donor substrate, bonding a receiver substrate to the strained semiconductor layer by a vitreous layer of a material that becomes viscous above a certain viscosity temperature to form a first structure. The method further includes detaching the donor substrate from the first structure to form a second structure comprising the receiver substrate, the vitreous layer, and the strained layer, and then heat treating the second structure at a temperature and time sufficient to relax strains in the strained semiconductor layer and to form a relaxed or pseudo-relaxed useful layer on the receiver substrate.

The invention relates to methods of forming a relaxed or pseudo-relaxed layer on a substrate, wherein the relaxed layer may be a semiconductor material. An implementation of the method includes growing an elastically stressed semiconductor material layer on a donor substrate, forming a glassy layer of a viscous material and bonding it to the stressed layer, removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate, and then heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer. The glassy layer can also be bonded to a receiving substrate so that the structure can be transferred thereto. Implementations also relate to structures obtained from the method.

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Biviers, France

Emmanuel Arene