Intel Corporation

Emily Walker

Tanay Gosavi

Noriyuki Sato

Kaan Oguz

Benjamin Buford

Sasikanth Manipatruni

Ian A Young

Dmitri E Nikonov

Kevin Lai Lin

Kevin O'Brien

Robert L Bristol

Christopher J Jezewski

Florian Gstrein

Chia-Ching Lin

Richard E Schenker

James M Blackwell

Christopher J Wiegand

Eungnak Han

Carl H Naylor

Marie Krysak

John J Plombon

Gurpreet Singh

Angeline Smith

Tofizur Rahman

Gary Allen

Tayseer Mahdi

Lauren Doyle

Brandon Jay Holybee

Xuanxuan Chen

Disclosed herein are structures and techniques utilizing directed self-assembly for microelectronic device fabrication. For example, a microelectronic structure may include a patterned region including a first conductive line and a second conductive line, wherein the second conductive line is adjacent to the first conductive line; and an unordered region having an unordered lamellar pattern, wherein the unordered region is coplanar with the patterned region.

Directed self-assembly structures and techniques

A memory apparatus includes a first electrode having a spin orbit material. The memory apparatus further includes a first memory device on a portion of the first electrode and a first dielectric adjacent to a sidewall of the first memory device. The memory apparatus further includes a second memory device on a portion of the first electrode and a second dielectric adjacent to a sidewall of the second memory device. A second electrode is on and in contact with a portion of the first electrode, where the second electrode is between the first memory device and the second memory device. The second electrode has a lower electrical resistance than an electrical resistance of the first electrode. The memory apparatus further includes a first interconnect structure and a second interconnect, each coupled with the first electrode.

Spin orbit memory devices with dual electrodes, and methods of fabrication

A magnetic memory device comprising a plurality of memory cells is disclosed. The memory device includes an array of memory cells where each memory cell includes a first material layer having a ferromagnetic material, a second material layer having ruthenium, and a third material layer having bismuth and/or antimony. The second material layer is sandwiched between the first material layer and the third material in a stacked configuration.

Magnetic memory device with ruthenium diffusion barrier

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Portland, OR, United States of America

Emily Walker