Applied Materials, Inc.

Emily Renuart

Avgerinos V Gelatos

Sang-Hyeob Lee

Jing Lin

Wing-Cheong Lai

Salvador P Umotoy

Kai Wu

Xiaoxiong Yuan

Yu Wen Chang

Gwo-Chuan Tzu

Amit Khandelwal

Ross Marshall

Sang Q Le

Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120&#xb0; C. to about 180&#xb0; C., preferably, from about 140&#xb0; C. to about 160&#xb0; C., more preferably, from about 145&#xb0; C. to about 155&#xb0; C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.

Temperature controlled lid assembly for tungsten nitride deposition

Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes to provide tungsten films having significantly improved surface uniformity while increasing the production level throughput. In one embodiment, a method is provided which includes depositing a tungsten silicide layer on the substrate by exposing the substrate to a continuous flow of a silicon precursor while also exposing the substrate to intermittent pulses of a tungsten precursor. The method further provides that the substrate is exposed to the silicon and tungsten precursors which have a silicon/tungsten precursor flow rate ratio of greater than 1, for example, about 2, about 3, or greater. Subsequently, the method provides depositing a tungsten nitride layer on the tungsten suicide layer, depositing a tungsten nucleation layer on the tungsten nitride layer, and depositing a tungsten bulk layer on the tungsten nucleation layer.

Vapor deposition of tungsten materials

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Santa Clara, CA, United States of America

Emily Renuart