Semiconductor Components Industries, LLC

Emily M Linehan

Prasad Venkatraman

Zia Hossain

Balaji Padmanabhan

Kirk K Huang

Sudhama C Shastri

Yenting Wen

Earl D Fuchs

Mark A Thomas

Ryan J Hurley

An electronic device can include a transistor having a gate electrode, a first portion, and a second portion, wherein along the gate electrode, the first portion of the transistor has a first gate-to-drain capacitance and a first gate-to-source capacitance, the second portion of the transistor has a second gate-to-drain capacitance and a second gate-to-source capacitance, and a ratio of the first gate-to-drain capacitance to the first gate-to-source capacitance is less than a ratio of the second gate-to-drain capacitance to the second gate-to-source capacitance.

Electronic device including a transistor having structures with different characteristics

In one embodiment, a split well region of one conductivity type is formed in semiconductor substrate of an opposite conductivity type. The split well region forms one plate of a floating capacitor and an electrode of a transient voltage suppression device.

Semiconductor filter structure and method of manufacture

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Gilbert, AZ, United States of America

Emily M Linehan