Frec'n'sys

Soitec

Centre National De La Recherche Scientifique

Université De Franche Comte

Etat Francais Represente Par Le Delegue General Pour L'armement

Emilie Courjon

Sylvain Ballandras

Florent Bernard

Thierry LaRoche

Julien Garcia

Alexandre Raveski

Dorian Gachon

Gwenn Ulliac

Blandine Edouard-Guichardaz

Florent Bassignot

Roger Petit

An acoustic wave sensor device comprises a quartz material layer surface; arranged along a first axis, a first interdigitated transducer disposed over the planar surface of the quartz material layer, a first reflection structure disposed over the planar surface of the quartz material layer, and a second reflection structure disposed over the planar surface of the quartz material layer; and arranged along a second axis, a second interdigitated transducer disposed over the planar surface of the quartz material layer, a third reflection structure disposed over the planar surface of the quartz material layer, and a fourth reflection structure disposed over the planar surface of the quartz material layer; and wherein the first axis and the second axis are inclined to each other by a finite angle.

Two-port acoustic wave sensor device

An acoustic wave sensor device, comprising an interdigitated transducer; a first reflection structure arranged on one side of the interdigitated transducer, and a second reflection structure arranged on another side of the interdigitated transducer; a first resonance cavity comprising a first upper surface and formed between the interdigitated transducer and the first reflection structure; a second resonance cavity comprising a second upper surface and formed between the interdigitated transducer and the second reflection structure; and wherein the second upper surface comprises a physical and/or chemical modification as compared to the first upper surface.

Differential acoustic wave sensors

A resonator device for measuring stress comprises at least two resonators, each resonator comprising an inter-digitated transducer structure arranged between two reflecting structures on or in a piezoelectric substrate, characterized in that the at least two resonators are arranged and positioned such that they have two different wave propagation directions, and each resonator comprises at least two parts with the area between the two parts of the at least two resonators forming a cavity, wherein the cavity is shared by the at least two resonators. A differential sensing device may comprise at least one resonator device as described wherein.

Resonator device for measuring stress including at least two resonators with shared cavity

An acoustic wave pressure sensor device configured to measure a pressure, comprising a substrate configured to bend when pressure is applied to the substrate such that an area of a first kind of strain and an area of a second kind of strain are formed in the substrate; an interdigitated transducer formed over the substrate; a first Bragg mirror formed over the substrate and arranged on one side of the interdigitated transducer; a second Bragg mirror formed over the substrate and arranged on another side of the interdigitated transducer; a first resonance cavity formed between the interdigitated transducer and the first Bragg mirror; a second resonance cavity formed between the interdigitated transducer and the second Bragg mirror; and wherein the first resonance cavity is formed over the area of the first kind of strain and the second resonance cavity is formed over the area of the second kind of strain.

Differential acoustic wave pressure sensor with improved signal-to-noise ratio

A transducer structure for a surface acoustic wave device, comprising a pair of inter-digitated comb electrodes, wherein the pair of inter-digitated comb electrodes comprises neighboring electrode means belonging to different comb electrodes and having a pitch p being defined as the edge-to-edge electrode means distance between two neighboring electrode means, the pitch p satisfying the Bragg condition; characterized in that the pair of inter-digitated comb electrodes comprises at least one region in which two or more neighboring electrode means belong to the same comb electrode while having an edge-to-edge distance to each other corresponding to the pitch p. The present disclosure relates also to a surface acoustic wave filter device.

Transducer structure for source suppression in saw filter devices

A surface acoustic wave device using a longitudinally polarized guided wave comprises a composite substrate comprising a piezoelectric layer formed over a base substrate, wherein the crystalline orientation of the piezoelectric layer with respect to the base substrate is such that, the phase velocity of the longitudinally polarized wave is below the critical phase velocity of the base substrate at which wave guiding within the piezoelectric layer vanishes. A method of fabrication of such surface acoustic wave device is also disclosed.

Surface acoustic wave device on composite substrate

An electrical device adapted to operate at a high operating ambient temperature includes an electrical component mounted inside a casing, a transmission/reception antenna and at least one electrical and mechanical connection between the electrical component and the antenna. The electrical and mechanical connection comprises a metal pad positioned under the casing, the antenna being connected to the pad; an electrical connection tab having a first end connected to the electrical component; and fixing means adapted to secure the pad and a second end of the connection tab of the component. The device is applicable to, for example, temperature sensors of the surface guided elastic wave type.

Antenna connection, particularly for surface guided elastic wave transducers

A piezoelectric and ferroelectric bulk wave transducer operating at a predetermined frequency includes a block of substrate, having a first thickness and in a first material, and a piezoelectric and ferroelectric transduction plate, having a length, a width and a second thickness, and in a second piezoelectric material, first and second metal electrodes covering the plate in the direction of the length thereof. The plate has first and second ferroelectric domains with alternating polarizations, distributed along the length of the plate according to a periodic pattern of pitch. The plate is attached perpendicularly to the block so that the width of the plate and the first thickness of the block are the same direction. The first and second material, the first thickness of the block, the length, the width, the second thickness, the pitch of the plate are configured for generating and trapping bulk waves at the operating frequency of the transducer, guided between both electrodes.

Electro-acoustic transducer with periodic ferroelectric polarization produced on a micromachined vertical structure

The present invention relates to the field of acoustic wave devices, and particularly to that of transducers capable of operating at very high frequencies, from a few hundred MHz to several gigahertz, and its subject is more particularly an interface acoustic wave device including at least two substrates and a layer of ferroelectric material, the latter being contained between a first electrode and a second electrode and having first positive-polarization domains and second negative-polarization domains, the first and second domains being alternated, wherein the assembly constituted by the first electrode, the layer of ferroelectric material, and the second electrode is contained between a first substrate and a second substrate.

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Besançon, France

Emilie Courjon