Stmicroelectronics (crolles 2) Sas

Commissariat a L'energie Atomique

Stmicroelectronics S.a.

Stmicroelectronics (grenoble) Sas

Emilie Bernard

Philippe Coronel

Bernard Guillaumot

Christian Vizioz

A semiconductor device includes a semiconductor channel region and a gate region, wherein the gate region includes at least one buried part extending under the channel region. The buried part of the gate region is formed from a cavity under the channel region. The cavity is filled with a first material. An opening is made to access the first material. In one implementation, aluminium is deposited in the opening in contact with the first material. An anneal is performed to cause the aluminium to be substituted for the first material in the cavity. In another implementation, a second material different from the first material is deposited in the opening. An anneal is performed to cause an alloy of the first and second materials to be formed in the cavity.

Method of manufacturing a buried-gate semiconductor device and corresponding integrated circuit

A semiconductor device includes a semiconductive channel region and a gate region. The gate region has at least one buried part extending under the channel region. The buried part of the gate region is formed by forming a cavity under the channel region. That cavity is at least partial filled with silicon and a metal. An annealing step is performed so as to form a silicide of said metal in the cavity. The result is a totally silicided buried gate for the semiconductor device.

Method of fabricating a buried-gate semiconductor device and corresponding integrated circuit

Growing community of inventors

Grenoble, France

Emilie Bernard