Asml Netherlands B.v.

Carl-zeiss-smt Ag

Emil Peter Schmitt-Weaver

Wim Tjibbo Tel

Kaustuve Bhattacharyya

Wolfgang Helmut Henke

Everhardus Cornelis Mos

Frank Staals

Reiner Maria Jungblut

Paul Frank Luehrmann

Bart Peter Bert Segers

Yichen Zhang

Hyunwoo Yu

Maria Kilitziraki

Petrus Gerardus Van Rhee

Alexander Ypma

Hakki Ergün Cekli

Leon Martin Levasier

Roy Werkman

Elliott Gerard McNamara

Xing Lan Liu

Daan Maurits Slotboom

Rene Marinus Gerardus Johan Queens

Michiel Kupers

Willem Seine Christian Roelofs

Marc Jurian Kea

Erik Henri Adriaan Delvigne

Koenraad Remi André Maria Schreel

Masashi Ishibashi

Wendy Johanna Martina Van De Ven

Rizvi Rahman

Jens Stäcker

Bernd Geh

Hendrikus Robertus Marie Van Greevenbroek

Jean-Philippe Xavier Van Damme

Michel Fransois Hubert Klaassen

Thomas Leo Maria Hoogenboom

Amir Bin Ismail

Paul Derwin

Christopher Prentice

Eduardus Johannes Gerardus Boon

Wolfgang Henke

Pavel Izikson

Jens Staecker

Martin Kers

Theodorus Franciscus Adrianus Maria Linschoten

A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.

Computational metrology

A method of determining a parameter of a lithographic apparatus, wherein the method includes providing first height variation data of a first substrate, providing first performance data of a first substrate, and determining a model based on the first height variation data and the first performance data. The method further includes obtaining second height variation data of a second substrate, inputting the second height variation data to the model, and determining second performance data of the second substrate by running the model. Based on the second performance data, the method determines a parameter of the apparatus.

Method for monitoring lithographic apparatus

Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.

Method of obtaining measurements, apparatus for performing a process step, and metrology apparatus

A method for monitoring a lithographic process, and associated lithographic apparatus. The method includes obtaining height variation data relating to a substrate supported by a substrate support and fitting a regression through the height variation data, the regression approximating the shape of the substrate; residual data between the height variation data and the regression is determined; and variation of the residual data is monitored over time. The residual data may be deconvolved based on known features of the substrate support.

Methods and apparatus for monitoring a lithographic manufacturing process

A system comprises a topography measurement system configured to determine a respective height for each of a plurality of locations on a substrate; and a processor configured to: determine a height map for the substrate based on the determined heights for the plurality of locations; and determine at least one alignment parameter for the substrate by comparing the height map and a reference height map, wherein the reference height map comprises or represents heights for a plurality of locations on a reference substrate portion.

System and method for measurement of alignment

Corrections are calculated for use in controlling a lithographic apparatus. Using a metrology apparatus a performance parameter is measured at sampling locations across one or more substrates to which a lithographic process has previously been applied. A process model is fitted to the measured performance parameter, and an up-sampled estimate is provided for process-induced effects across the substrate. Corrections are calculated for use in controlling the lithographic apparatus, using an actuation model and based at least in part on the fitted process model. For locations where measurement data is available, this is added to the estimate to replace the process model values. Thus, calculation of actuation corrections is based on a modified estimate which is a combination of values estimated by the process model and partly on real measurement data.

Mark position determination method

A first substratehas a calibration pattern applied to a first plurality of fieldsby a lithographic apparatus. Further substrateshave calibration patterns applied to further pluralities of fields. The different pluralities of fields have different sizes and/or shapes and/or positions. Calibration measurements are performed on the patterned substratesand used to obtain corrections for use in controlling the apparatus when applying product patterns to subsequent substrates. Measurement data representing the performance of the apparatus on fields of two or more different dimensions (fieldsin this example) is gathered together in a databaseand used to synthesize the information needed to calibrate the apparatus for a new size. Calibration data is also obtained for different scan and step directions.

Calibration method for a lithographic apparatus

A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A functional relationship between local height deviations across a substrate and focus information, such as a determined focus amount, is determined for a substrate, e.g., a reference substrate. Height deviations are subsequently measured for another substrate, e.g. a production substrate. The height deviations for the subsequent substrate and the functional relationship are used to determine predicted focus information for the subsequent substrate. The predicted focus information is then used to control the lithographic apparatus to apply a product pattern to the product substrate.

Method for adjusting actuation of a lithographic apparatus

A first substrate () has a calibration pattern applied to a first plurality of fields () by a lithographic apparatus. Further substrates () have calibration patterns applied to further pluralities of fields (). The different pluralities of fields have different sizes and/or shapes and/or positions. Calibration measurements are performed on the patterned substrates () and used to obtain corrections for use in controlling the apparatus when applying product patterns to subsequent substrates. Measurement data representing the performance of the apparatus on fields of two or more different dimensions () is gathered together in a database () and used to synthesize the information needed to calibrate the apparatus for a new size. Calibration data is also obtained for different scan and step directions.

A lithographic apparatus applies a pattern onto a substrate using an optical projection system. The apparatus includes an optical level sensor and an associated processor for obtaining a height map of the substrate surface prior to applying the pattern. A controller uses the height map to control focusing with respect to the projection system when applying the pattern. The processor is further arranged to use information relating to processing previously applied to the substrate to define at least first and second regions of the substrate and to vary the manner in which the measurement signals are used to control the focusing, between the first and second regions. For example, an algorithm to calculate height values from optical measurement signals can be varied according to differences in known structure and/or materials. Measurements from certain regions can be selectively excluded from calculation of the height map and/or from use in the focusing.

Lithographic apparatus with data processing apparatus

A lithography system configured to apply a pattern to a substrate, the system including a lithography apparatus configured to expose a layer of the substrate according to the pattern, and a machine learning controller configured to control the lithography system to optimize a property of the pattern, the machine learning controller configured to be trained on the basis of a property measured by a metrology unit configured to measure the property of the exposed pattern in the layer and/or a property associated with exposing the pattern onto the substrate, and to correct lithography system drift by adjusting one or more selected from: the lithography apparatus, a track unit configured to apply the layer on the substrate for lithographic exposure, and/or a control unit configured to control an automatic substrate flow among the track unit, the lithography apparatus, and the metrology unit.

Lithography system and a machine learning controller for such a lithography system

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Eindhoven, Netherlands

Emil Peter Schmitt-Weaver