Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Emiko Adachi

Yukie Nishikawa

Kotaro Zaima

A semiconductor device includes a semiconductor layer, a first electrode on a first surface of the semiconductor layer, a plurality of second electrodes on a second surface of the semiconductor layer, a control electrode between the first electrode and each of the plurality of second electrodes and electrically insulated from the semiconductor layer and each of the plurality of second electrodes, and a resin layer partially covering the second surface of the semiconductor layer and having a plurality of openings through which the respective second electrodes are at least partially exposed. Each of the plurality of openings has rounded corners. The device further includes a sensor element above the second surface of the semiconductor layer and covered by a first part of the resin layer surrounded by the openings.

Semiconductor device

A semiconductor device includes a semiconductor layer having a first surface in which a plurality of trenches each extending along a first direction are arranged along a second direction perpendicular to the first direction, a first electrode on a second surface of the semiconductor layer, a second electrode on the first surface of the semiconductor layer, and a control electrode inside at least one of the trenches. The plurality of trenches includes first, second, and third trenches. The first and second trenches are connected to each other via a first connector at an end in the first direction of each of the first and second trenches. The third trench extends beyond the end of each of the first and second trenches along the first direction.

Growing community of inventors

Nonoichi Ishikawa, Japan

Emiko Adachi