Panasonic Corporation

Emi Ohtsuka

Ryohei Miyagawa

Mikiya Uchida

A method of production of a semiconductor device includes: forming a pattern having open element isolation regions on a first insulating film situated on a semiconductor substrate; forming trenches at the element isolation regions on the semiconductor substrate; forming a second insulating film on the first insulating film and inside the trenches; forming holes in the second insulating film in active regions sectioned by the element isolation regions; and leaving the second insulating film inside the trenches only. An interval between an outer perimeter of each the active regions and an outer perimeter of each of the holes in each of the active regions is set such that the interval in the first circuit region, in which a total area of the active regions is relatively large, is smaller than the interval in the second circuit region, in which the total area of the active regions is relatively small.

Method of production of semiconductor device and method of production of solid-state imaging device

An N-type epitaxial layer, which is formed above an N-type semiconductor substratein each of a pixel region and a peripheral circuit region; a first P-type wellformed above the N-type epitaxial layerin the pixel region; and light receiving regions, which are formed within the first P-type welland each of which is a component of a photodiode, are included. The peripheral circuit region includes: second P-type wells, which are formed from a surfaceof the peripheral circuit region to a desired depth and each of which is a component of an N-Channel MOS transistor; an N-type wellwhich is formed from the surfaceof the peripheral circuit region to a desired depth and which is a component of a P-Channel MOS transistor; and a third P-type wellwhich is formed so as to have such a shape as to isolate the N-type wellfrom the N-type epitaxial layerand which has a higher impurity concentration than that of the first P-type well

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Toyama, Japan

Emi Ohtsuka