Joled Inc.

Emi Kobayashi

Arinobu Kanegae

Yusuke Fukui

A method of fabricating a thin-film transistor is provided. In the method, an oxide semiconductor layer is formed above a substrate. A gate insulating layer is formed above the oxide semiconductor layer. A gate electrode is formed above the gate insulating layer. A metal oxide layer is formed on the oxide semiconductor layer by reactive sputtering to reduce a resistance of the oxide semiconductor layer in a region in contact with the metal oxide layer.

Thin-film transistor, method of fabricating thin-film transistor, and display device

A thin-film transistor includes: an oxide semiconductor layer having a channel region, a source region, and a drain region; a gate insulating layer disposed above the oxide semiconductor layer; a gate electrode disposed at a position that is above the gate insulating layer and opposing the channel region; and a metal oxide layer stacked on the oxide semiconductor layer and in contact with the source region and the drain region. The metal oxide layer includes, as a main component, an oxide of a second metal whose bond dissociation energy with oxygen is greater than that of a first metal included in the oxide semiconductor layer. A first concentration ratio of oxygen to the second metal in an interface layer between the metal oxide layer and the oxide semiconductor layer is greater than a second concentration ratio of the same in a bulk layer of the metal oxide layer.

A method of fabricating a thin-film transistor includes: forming an oxide semiconductor layer above a substrate; forming a gate insulating layer above the oxide semiconductor layer; forming a gate electrode above the gate insulating layer; forming a cover layer on the gate electrode; forming a side wall insulating layer on a side wall portion of the gate electrode by heat treatment, after the forming of a cover layer; forming an interlayer insulating layer covering the gate electrode and the oxide semiconductor layer, after the forming of a side wall insulating layer; and forming, above the interlayer insulating layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer.

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Osaka, Japan

Emi Kobayashi