Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Emi Hayashi

Kiyoto Ohta

Yuji Yamasaki

Yoshihiro Tabira

A semiconductor memory device is provided with a plurality of memory blocks including a plurality of word lines and a plurality of bit line pairs intersecting the individual word lines, a plurality of memory cells provided at each of intersections where the individual word lines intersect the bit line pairs, and a plurality of sense amplifiers respectively provided in correspondence with the bit line pairs. The semiconductor memory device further comprises common data bus line pairs each connected via switch transistors to the corresponding memory blocks, a read/write amplifier for performing a data read/write operation through the common data bus line pairs on the memory blocks, and an SRAM cell electrically connected via switch transistors to each common data bus line pair.

Semiconductor memory device

A plurality of cells which have input terminals and output terminals on four sides are divided into a plurality of groups of cells. The plurality of cells are placed in an array form at positions which are either adjacent or nonadjacent. A plurality of groups of cells are placed one after another such that the resulting layout becomes substantially rectangular or square. Power buses are routed parallel to each other, and power supply lines are routed from the power buses to cells. Data lines are routed between the terminals of the cells.

Growing community of inventors

Kyoto, Japan

Emi Hayashi