Stmicroelectronics (rousset) Sas

Stmicroelectronics (crolles 2) Sas

Emeline Souchier

Philippe Boivin

Olivier Weber

Emmanuel Petitprez

Jean-Jacques Fagot

Jean Jacques Fagot

The disclosure relates to integrated circuits and methods including one or more rows of transistors. In an embodiment, an integrated circuit includes a row of bipolar transistors including a plurality of first conduction regions, a second conduction region, and a common base between the first conduction regions and the second conduction region. An insulating trench is in contact with each bipolar transistor of the row of bipolar transistors. A conductive layer is on the insulating trench and the common base between the first conduction regions. A spacer layer is between the conductive layer and the first conduction regions.

Growing community of inventors

Saint-Ismier, France

Emeline Souchier