Centrum Badan Wysokocisnieniowych Polskiej Akademii Navk

Elzbieta Litwin-Staszewska

Tadeusz Suski

Sylwester Porowski

Izabella Grzegory

Michal Leszczynski

Jan Jun

Czeslaw Skierbiszewski

Henryk Teisseyre

Jacek Baranowski

The subject of the Invention is the method of fabrication of nitride semiconductor A,B,such as GaN, AlN, InN or their solid solutions, characterized by p- or n-type conductivity, high intensity of emitted light and high structural quality. The semiconductors obtained by this method are applied in the construction of light emitting devices, light detectors and electric current amplifiers such as for example: highly efficient blue and green light diodes, laser diodes and high power lasers, ultraviolet detectors and high temperature field transistors. The method according to the Invention is characterized by the fact that the homoepitaxial or heteroepitaxial layers of nitride semiconductors A,B,are deposited on the conductive substrate after the introductory processing or isolating substrate, and after that the so prepared structures are located in high pressure diffusional chamber filled with the one or multi-component gas, compressed to pressure in the range 1000-20000 bar, and annealed in the temperature 1000-1800 &deg; C. in the prescribed time in the presence of the dopant from the external and/or internal source.

Method of fabrication of semiconducting compounds of nitrides A3B5 of P-and N-type electric conductivity

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Warsaw, Poland

Elzbieta Litwin-Staszewska