Kla-tencor Technologies Corporation

Elyakim Kassel

Michael E Adel

Vladimir Levinski

Mark Ghinovker

Chris Mack

Mark Davis Smith

Moshe E Preil

John Charles Robinson

Amir Widmann

Boris Golovanevsky

Pavel Izikson

Mike Adel

Jorge Poplawski

Robert Hardister

Mike Pochkowski

Mark Smith

Computer-implemented methods, carrier media, and systems for creating a metrology target structure design for a reticle layout are provided. One computer-implemented method for creating a metrology target structure design for a reticle layout includes simulating how one or more initial metrology target structures will be formed on a wafer based on one or more fabrication processes that will be used to form a metrology target structure on the wafer and one or more initial metrology target structure designs. The method also includes creating the metrology target structure design based on results of the simulating step.

Computer-implemented methods, carrier media, and systems for creating a metrology target structure design for a reticle layout

An overlay method for determining the overlay error of a device structure formed during semiconductor processing is disclosed. The overlay method includes producing calibration data that contains overlay information relating the overlay error of a first target at a first location to the overlay error of a second target at a second location for a given set of process conditions. The overlay method also includes producing production data that contains overlay information associated with a production target formed with the device structure. The overlay method further includes correcting the overlay error of the production target based on the calibration data.

Overlay metrology and control method

The present invention is directed to novel metrology marks and methods for their use. The marks comprise cross hashed overlay metrology marks formed on a substrate including a plurality of target regions. The mark including a first grating structure formed in one layer of a target region and including a second grating structure formed in another layer of the target region. The periodic features of the first and second grating structures are oriented substantially orthogonal one another to form a cross-hatched metrology target in the target region. Additionally, the patent discloses methods of employing the metrology marks to obtain overlay metrology measurements.

Cross hatched metrology marks and associated method of use

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Misgav, Israel

Elyakim Kassel