Ecole Polytechnique Federale De Lausanne

Avalon Photonics Ltd.

Epfl

Elyahou Kapon

Vladimir Iakovlev

Alexei Sirbu

Alok Rudra

Grigore Suruceanu

Fabrice Monti Di Sopra

Pascal Gallo

Tomasz Czyszanowski

Maciej Dems

Marcel Brunner

Michal Wasiak

Jaroslaw Walczak

The present invention concerns new designs of VCLs with high contrast gratings (HCG) combined with diamond layer as a bottom mirror. They can be realized either with a classical V-shaped pumping scenario, or through the introduction of the pumping beam from the bottom direction, through the HCG that can be designed to be transparent at the wavelength of the pumping light. They can also be completed by a HCG combined with diamond layer as top mirror, reflecting the pump diode laser and transparent to the VCL emission in the case the pumped and emitted beams are collinear.

Vertical cavity surface emitting laser cavity with low thermal impedance

An electrically pumped VCSEL and a method of its fabrication are presented. The VCSEL comprises an active cavity material sandwiched between top and bottom DBR stacks, the top DBR having at least one n-semiconductor layer. The device defines an aperture region between the structured surface of the active cavity material and the n-semiconductor layer of the top DBR stack. The structured surface is formed by a top surface of a mesa that includes at least the upper nlayer of a p/ntunnel junction and the surface of a p-type layer outside the mesa. The structured surface is fused to the surface of the n-semiconductor layer of the DBR stack due to the deformation of these surfaces, thereby creating an air gap in the vicinity of the mesa between the fused surfaces. The active region is defined by the current aperture which includes the mesa surrounded by the air gap, thereby allowing for restricting an electrical current flow to the active region, while the air gap provides for the lateral variation of the index of refraction in the VCSEL.

Vertical cavity surface emitting laser and a method of fabrication thereof

A tunable Fabry-Perot vertical cavity photonic device and a method of its fabrication are presented. The device comprises top and bottom semiconductor DBR stacks and a tunable air-gap cavity therebetween. The air-gap cavity is formed within a recess in a spacer above the bottom DBR stack. The top DBR stack is carried by a supporting structure in a region thereof located above a central region of the recess, while a region of the supporting structure above the recess and outside the DBR stack presents a membrane deflectable by the application of a tuning voltage to the device contacts.

Method of fabrication of a micro-electromechanically tunable vertical cavity photonic device

Micro-electromechanically tunable vertical cavity photonic device and a method of fabrication thereof

An electrically pumped VCSEL and a method of its fabrication are presented. The VCSEL comprises an active cavity material sandwiched between top and bottom DBR stacks, the top DBR having at least one n-semiconductor layer. The device defines an aperture region between the structured surface of the active cavity material and the n-semiconductor layer of the top DBR stack. The structured surface is formed by a top surface of a mesa that includes at least the upper n layer of a p /n tunnel junction and the surface of a p-type layer outside the mesa. The structured surface is fused to the surface of the n-semiconductor layer of the DBR stack due to the deformation of these surfaces, thereby creating an air gap in the vicinity of the mesa between the fused surfaces. The active region is defined by the current aperture which includes the mesa surrounded by the air gap, thereby allowing for restricting an electrical current flow to the active region, while the air gap provides for the lateral variation of the index of refraction in the VCSEL.

A vertical-cavity surface-emitting laser device (VCSEL) comprises a plurality of VCSEL elements arranged on a common substrate, each VCSEL element comprising first mirror means and second mirror means, each having a predefined reflectivity at a predetermined wavelength, for forming an optical resonator for said wavelength, and a laser active region disposed between said first and second mirror means. In addition, the VCSEL device comprises a grid layer having a plurality of openings corresponding to the respective VCSEL elements and a contact layer having a predetermined thickness, said contact layer being interposed between each of said first mirror means and said grid layer, wherein an optical thickness of said contact layer and a reflectivity and an absorption of said grid layer is selected so as to provide an effective reflectivity of each of said first mirror means depending on said grid layer and being different for areas covered by the grid and areas corresponding to said grid openings.

Vertical-cavity surface-emitting laser comprised of single laser elements arranged on a common substrate

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Lausanne, Switzerland

Elyahou Kapon