Commissariat a L'energie Atomique Et Aux Energies Alternatives

Stmicroelectronics (Crolles 2) Sas

Stmicroelectronics (Grenoble 2) Sas

Elodie Ghegin

Fabrice Nemouchi

Philippe Rodriguez

Charles Baudot

Bertrand Szelag

Yann Bogumilowicz

Christophe Jany

A process for fabricating a heterostructure includes at least one elementary structure made of III-V material on the surface of a silicon-based substrate successively comprising: producing a first pattern having at least a first opening in a dielectric material on the surface of a first silicon-based substrate; a first operation for epitaxy of at least one III-V material so as to define at least one elementary base layer made of III-V material in the at least first opening; producing a second pattern in a dielectric material so as to define at least a second opening having an overlap with the elementary base layer; a second operation for epitaxy of at least one III-V material on the surface of at least the elementary base layer made of III-V material(s) so as to produce the at least elementary structure made of III-V material(s) having an outer face; an operation for transferring and assembling the at least photonic active elementary structure via its outer face, on an interface that may comprise passive elements and/or active elements, the interface being produced on the surface of a second silicon-based substrate; removing the first silicon-based substrate and the at least elementary base layer located on the elementary structure.

Method for fabricating a heterostructure comprising active or passive elementary structure made of III-V material on the surface of a silicon-based substrate

A process for producing a component includes a structure made of III-V material(s) on the surface of a substrate, the structure comprising at least one upper contact level defined on the surface of a first III-V material and a lower contact level defined on the surface of a second III-V material, comprising: successive operations of encapsulation of the structure with at least one dielectric; making primary apertures in a dielectric for the two contacts; making secondary apertures in a dielectric for the two contacts; at least partial filling of the apertures with at least one metallic material so as to produce upper contact bottom metallization and at least one upper contact pad in contact with the metallization for each of said contacts. A component produced by the process is also provided. The component may be a laser diode.

Process for producing a component comprising III-V materials and contacts compatible with silicon process flows

A production of contact zones for a transistor device including the steps of:

Formation of Ohmic contacts for a device provided with a region made of III-V material and a region made of another semiconductor material

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Le Versoud, France

Elodie Ghegin