Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Elmar Lohmüller

Ralf Preu

Florian Clement

Andreas Brand

Puzant Baliozian

Tobias Fellmeth

Nico Wöhrle

Pierre Saint-Cast

A a semiconductor component () having a front side and an opposite rear side and also side surfaces, and also at least one emitter () and at least one base (), wherein a pn junction () is formed between emitter () and base () and the emitter () extends parallel to the front and/or rear side. At least one side surface is a passivated separating surface (T), at which a separating surface passivation layer () is arranged, which has stationary charges having a surface charge density at the separating surface (T) with a magnitude of greater than or equal to 10cm-2. A method for singulating a semiconductor component () having a pn junction is also provided.

Semiconductor component and method for singulating a semiconductor component having a pn junction

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Freiburg, Germany

Elmar Lohmüller