Infineon Technologies Ag

Elmar Kuehle

Marianna Nomann

Arthur Unrau

A baseplate for a semiconductor module comprises at least one elevation. The at least one elevation is formed integrally with the baseplate. The baseplate has a uniform first thickness or a thickness which decreases continuously from the edge regions toward the center and which is increased locally up to a maximum second thickness in the region of each of the at least one elevation.

Baseplate for a semiconductor module and method for producing a baseplate

A power semiconductor module arrangement includes: a base plate; a contact element configured to, when the base plate is arranged in a housing, provide an electrical connection between an inside and an outside of the housing; an electrically insulating first layer connected to the base plate, the contact element being connected to the electrically insulating first layer; a third layer on the base plate or on the electrically insulating first layer; and a second layer on the electrically insulating first layer or on the contact element. The electrically insulating first layer is mounted on the base plate such that the third layer attaches the electrically insulating first layer to the base plate. The contact element is mounted on the electrically insulating first layer such that the second layer attaches the contact element to the electrically insulating first layer.

Power semiconductor module arrangement having a base plate and a contact element

A method for producing a power semiconductor module arrangement having a base plate and a contact element configured to, when the base plate is arranged in a housing, provide an electrical connection between an inside and an outside of the housing, includes: connecting an electrically insulating first layer to the base plate; and connecting the contact element to the first layer. Connecting the first layer to the base plate includes forming a third layer on the base plate or on the first layer and mounting the first layer on the base plate such that the third layer attaches the first layer to the base plate. Connecting the contact element to the first layer includes forming a second layer on the first layer or on the contact element and mounting the contact element on the first layer such that the second layer attaches the contact element to the first layer.

Method for producing power semiconductor module arrangement

A power semiconductor module arrangement includes a base plate configured to be arranged in a housing, a contact element configured to, when the base plate is arranged in the housing, provide an electrical connection between the inside and the outside of the housing, and a connecting element configured to connect the contact element to the base plate. The connecting element includes a first electrically insulating layer, a second electrically insulating layer configured to attach the contact element to the first electrically insulating layer, and a third electrically insulating layer configured to attach the first electrically insulating layer to the base plate.

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Warstein, Germany

Elmar Kuehle