Osram Opto Semiconductors Gmbh

Infineon Technologies Ag

Osram Oled Gmbh

Elmar Baur

Martin Rudolf Behringer

Walter Wegleiter

Reiner Windisch

Patrick Rode

Petrus Sundgren

Hans Hurt

Heribert Zull

Alexander Wilm

Josef Wittl

Stefan Lorenz

Frank Baumann

Horst Varga

Alexander Heindl

Clemens Hofmann

Martin Hohenadler

Bernd Bohm

A lighting device and a lighting system are disclosed. In an embodiment, a lighting device includes at least one optoelectronic semiconductor chip, two contacts configured to couple the lighting device to a DC voltage and a driver circuit interconnected in series with the at least one semiconductor chip in a string, wherein the driver circuit comprises a monolithic, unhoused controller, wherein the driver circuit is configured to adjust a current for operating the at least one semiconductor chip, and wherein the string extends between the two contacts in an electrically coupling way.

Illumination device and illumination system

A mounting structure for a light guide having a core and a longitudinal axis, wherein the mounting structure includes a holder into which the light guide is insertable obliquely or perpendicular to the longitudinal axis, and the mounting structure is configured to provide an optical coupling to the core of the light guide.

Mounting structure for a light guide, housing with a mounting structure, optoelectronic device and method of producing an optoelectronic device

A semiconductor illuminating device is disclosed. The device includes an LED configured for emitting blue primary radiation and an LED phosphor arranged and configured such that it emits secondary light that forms at least one component of the illumination light, wherein the LED phosphor comprises a red phosphor for emitting red light as a component of the secondary light and a green phosphor for emitting green light as a component of the secondary light, wherein the green light has a color point located above a first straight line having a slope mand a y-intercept nin a CIE standard chromaticity diagram, with the slope m=1.189 and the y-intercept n=0.226, and wherein the components of the illumination light are at such a ratio to one another that the illumination light has a color temperature of at most 5500 K.

Semiconductor illuminating device

A light-emitting diode chip includes a semiconductor layer sequence having a phosphide compound semiconductor material. The semiconductor layer sequence contains a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active region serves to emit electromagnetic radiation. The n-type semiconductor region faces a radiation exit area of the light-emitting diode chip, and the p-type semiconductor region faces a carrier of the light-emitting diode chip. A current spreading layer having a thickness of less than 500 nm is arranged between the carrier and the p-type semiconductor region. The current spreading layer has one or a plurality of p-doped AlGaAs layers with 0.5&#x3c;x&#x2266;1.

Light-emitting diode chip with current spreading layer

A semiconductor chip is specified that has a contact layer that is not optimum for many common applications. For example, the contact layer is too thin to tolerate an operating current intended for the semiconductor chip without considerable degradation. Also specified is an optoelectronic component in which the semiconductor chip can be integrated so that the suboptimal quality of the contact layer is compensated for. In the component the semiconductor chip is applied to a carrier body so that the contact layer is arranged on a side of the semiconductor body that is remote from the carrier body. The semiconductor chip and the carrier body are at least partly covered with an electrically isolating layer, and an electrical conductor applied to the isolating layer extends laterally away from the semiconductor body and contacts at least a partial surface of the contact layer. In addition, an advantageous process for producing the component is specified.

Optoelectronic semiconductor chip, optoelectronic component and a method for producing an optoelectronic component

A method for producing an optoelectronic semiconductor component includes providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, wherein the first height is greater than the second height; providing a second wafer; applying a photoresist to outer areas of the second wafer; patterning a surface of the photoresist facing away from the second wafer by impressing the patterned surface of the first wafer into the photoresist, wherein the elevations are impressed as trenches having a first and second depth into the photoresist; applying a patterning method to the patterned surface of the photoresist, wherein the structure applied on the photoresist is transferred at least in places to the outer area of the second wafer.

Method for producing an optoelectronic semiconductor component

A bidirectional optical transmitting and receiving module for connection to an optical waveguide, having an optical receiving device and an optical transmitting device, with the receiving device being arranged in one region of the optical axis of the optical waveguide, in front of its end surface. In order to make it possible with a transmitting and receiving module such as this for this module to be produced very easily and at the same time in order to very largely avoid electrical crosstalk between the transmitting device and the receiving device, the transmitting device is arranged away from the region of the optical axis of the optical waveguide, and at least one deflection device is arranged in the beam path between the optical waveguide and the receiving device and injects the light which is emitted from the transmitting device into the optical waveguide.

Bidirectional optical transmitting and receiving module

An optoelectronic transceiver module includes a coupler and an optoelectronic transmitter and receiver. The coupler couples one optical waveguide of one optical network. The coupler and network each have a reflection impulse response. The transceiver has a compensator generating an electrical correction signal using characteristic parameters of the reflection impulse response of the coupler and/or optical network and the electrical data signals of the transmitter, and uses the correction signal to correct the data signals received by the receiver. In the method, optical signals are received in a first transceiver from a second transceiver. Characteristic parameters of the reflection characteristics of the optical system coupled to the receiver in the first transceiver are determined, these parameters are used to generate a correction signal from the data signal to be sent from the first transceiver, and an electrical received signal is corrected in the first transceiver using the correction signal.

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Wuppertal, Germany

Elmar Baur