Wright State University

USA As Represented by Secretary of the Navy

Ohio State Innovation Foundation

Elliott R Brown

Weidong Zhang

Paul Berger

Tyler Growden

David J Meyer

David F Storm

John S Cetnar

John R Middendorf

A unipolar-doped light emitting diode or laser diode is described. The diode includes a bottom region having an n-type layer, a top region having an n-type layer, and a middle region between the top and bottom regions having at least one material different from the top or bottom region forming two or more heterojunctions. The top and bottom regions create light emission by interband tunneling-induced photon emission. Systems including the unipolar-doped diode including LIDAR are also taught.

Infrared light emitters based on interband tunneling in unipolar doped n-type tunneling structures

Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.

Gallium nitride cross-gap light emitters based on unipolar-doped tunneling structures

A hydration sensor is provided that includes a circulator having a plurality of ports, an amplitude-modulated coherent source connected to a first port of the circulator, a rectifier or other power sensor connected to a second port of the circulator followed by an RF baseband low-noise amplifier, a coupling structure connected to the third port of the circulator, and a demodulator connected to the output of the rectifier. The hydration sensor can include an RF low noise amplifier between the circulator and rectifier, and/or a second amplitude modulator between the circulator and the coupling structure. The coupling structure can be either a guided-wave near-field structure or an interfacial capacitive or inductive element. In the former case, the hydration is determined by measuring the reflectivity of the guided-wave radiation, and in the latter case it is determined by measuring the change of reflectivity (through change of impedance) of the interfacial element.

Hydration sensor

A device for measuring and characterizing solid-state devices or integrated circuits at RF frequencies up to 1.0 THz and beyond is provided that includes a transmitting photomixing probe structure and a receiving photomixing probe structure. The transmitting photomixing probe structure and the receiving photomixing probe structure are ac-coupled to the solid-state device or integrated circuit in a contact-free manner.

Contact-free photomixing probe for device and integrated circuit measurement or characterization

Terahertz (THz) distributed detectors, and arrays of detectors that utilize structured surface plasmonic effects for more efficient coupling to free space are discussed. One example distributed detector includes a detector junction comprising a Schottky or tunneling interface between a semiconductor and a detector metal, an ohmic junction comprising an ohmic interface between the semiconductor and an ohmic metal, and a gap that separates the detector junction from the ohmic junction. Structured surface plasmons concentrate an electric field in the gap when the distributed detector is exposed to THz radiation polarized perpendicular to the gap.

Growing community of inventors

Beavercreek, OH, United States of America

Elliott R Brown