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Gosudarstvenny Nauchno-issledovatelsky I Proektny Institut

Ellin Petrovich Bochkarev

Oleg Evgenievich Korobov

Vadim Nikolaevich Maslov

Nikolai Georgievich Voronin

Elena M Kistova

Elena S Jurova

Izidor K Bronshtein

Jury V Sokurenko

Natalya I Lukicheva

Evgeny V Sinitsyn

Alexandr Nikolaevich Vlasov

Alla Naumovna Lupacheva

Viktor Vasilievich Myasoedov

Felix Aronovich Gimelfarb

Marina Andreevna Konstantinova

Veniamin Mikhailovich Samaginov

Arkady A Belsky

Alexandr V Eljutin

Nikolai A Novikov

Nina Andreevna Ljubimova

Vladimir N Abrjutin

Igor Vladimirovich Prokopov

Nadezhda Semenovna Gorbacheva

Svetlana M Baryshnikova

Vladimir Petrovich Kuklev

Mikhail S Zvyagin

Ljubov I Konstantinova

Emilia Stanislavovna Kudeyarova

Irina B Nikitina

Nail Z Nasyrov

Grigory Borisovich Goldin

Edige R Khairulin

Ljudvig Alexandrovich Dolomanov

Vladimir Grigorievich Demyanets

Vladimir Viktorovich Nechaev

Eduard Ivanovich Gavrilin

Jury Anatolievich Drozdov

Jury Vasilievich Jushkov

Valentin Petrovich Khlebnikov

According to the invention a process is proposed for purifying low-melting metals from impurities, residing in that a melt of a low-melting metal is treated with an aqueous solution of an inorganic acid or an alkali in the presence of organic compounds with ionogenic groupings. The proposed invention enhances the purity degree of the low-melting metal being purified and at the same time reduces the losses thereof.

Process for purifying low-melting metals from impurities

A method of applying a layer of a source substance over a recipient, consisting in that the substance of the source is converted to gas and then precipitated onto the surface of the recipient, wherein the substance is, according to the invention, applied over at least one intermediate body and then the substance is transferred from the intermediate body onto the recipient.

Method of applying layers of source substance over recipient and device

A method for producing a heterogeneous semiconductor structure with a composition gradient in which a semiconductor material is transferred through the gaseous phase onto the substrate from a source comprising the two AB and AC components and including a number of parallel strips, each of said strips having a constant ratio between the AB and AC components. At first, the source is gradually brought under the substrate at a speed chosen within the range of 100 cm per hour to 0.1 cm per hour, bringing first the strip of the source, which has a maximum content of the AB component. As all the strips have been brought under the substrate, the source is stopped for a period of time required for the formation of the main layer of a required thickness.

Fabrication of a heterogeneous semiconductor structure with composition

A heterogeneous semiconductor structure with a composition gradient is used to produce lasers, spectrometers and pressure gauges and comprises a substrate, a transition layer and a main layer in the form of a doped solid solution of AB.sub.x C.sub.1-x having a composition gradient with a constant direction parallel to the main axis of the substrate's surface. The transition layer 2 is also of a doped solid solution of AB.sub.x C.sub.1-x whose composition continuously changes along the main axis, from the portion with a maximum content of the AB component to the portion corresponding to a maximum content of the AC component in the direction perpendicular to the substrate's surface, and from the composition of the main layer 3 on the boundary with the transition layer 2 to the composition having a maximum content of the AB component on the boundary with the substrate. The semiconductor structure with a composition gradient is produced of material transferred through the gaseous phase onto the substrate from a source comprising the two AB and AC components and including a number of parallel strips, each of said strips having a constant ratio between the AB and AC components. At first, the source is gradually brought under the substrate at a speed chosen within the range of 100 cm per hour to 0.1 cm per hour, bringing first the strip of the source, which has a maximum content of the AB component. After all the strips have been brought under the substrate, the source is stopped for the period of time required for the formation of the main layer to a required thickness.

Heterogeneous semiconductor structure with composition gradient and

A device in which a reaction vessel is filled with a gas, and in which first and second equal and coaxial disks are located. They have parallel operational surfaces carrying respectively, at least one substrate and at least two sources of different semiconductor substances forming the semiconductor periodic structure. A substrate heater and a source heater are placed near the first and second disks, respectively. First and second electric motors are arranged outside the reaction vessel in order to rotate, respectively, the first and second disks about the vessel vertical axis, as well as a drive to shift one of the disks along the axis.

Device for epitaxial growing of semiconductor periodic structures from

A device for epitaxial growing of semiconductor periodic structures from a gas phase, comprises a pressure-tight tubular reactor filled with gas and set in a tilted position, an electric motor located outside the reactor and designed to rotate said reactor about its longitudinal axis, at least one group of elements located inside the reactor, comprising a holder of at least two sources of substances of different solid semiconductor materials, which are adjacent to each other, a unit for holding at least one substrate and a device for maintaining a constant clearance between the surfaces of the substrate and the sources, as well as heaters of the sources and the substrate located outside the reactor.

Growing community of inventors

Moscow, Russia

Ellin Petrovich Bochkarev