Az Electronic Materials (luxembourg) S.a.r.l.

Merck Patent Gmbh

Elizabeth Wolfer

Huirong Yao

JoonYeon Cho

Salem K Mullen

Munirathna Padmanaban

Alberto D Dioses

M Dalil Rahman

Douglas S McKenzie

Venkata Gopal Reddy Chada

Takanori Kudo

Ruzhi Zhang

Clement Anyadiegwu

JiHoon Kim

Orest Polishchuk

Jihoon Kim

Bharatkumar K Patel

Douglas Mckenzie

Joonyeon Cho

A coating composition, and uses thereof, including a solvent, metal oxide nanoparticles dispersed in this solvent, and a high carbon polymer dissolved in this solvent, where the high carbon polymer includes a repeat unit of structure (1), a hydroxybiphenyl repeat unit of structure (2) and a moiety containing a fused aromatic containing moiety of structure (3) where Rand Rare independently selected from the group of hydrogen, an alkyl and a substituted alkyl, Ar is an unsubstituted or substituted fused aromatic ring and Xis an alkylene spacer, or a direct valence bound. 

Composition of spin-on materials containing metal oxide nanoparticles and an organic polymer

The present invention relates to a novel composition with improved stability containing soluble, multi-ligand-substituted metal compound, a polyol compound and a solvent useful for filling material on photoresist patterns with good trench or via filling properties of microlithographic features, where the filled patterns having good plasma etch resistance in oxygen based plasmas and are used as a hard mask in forming fine patterns on semiconductor substrates by pattern transfer of this hard mask. The present invention further relates to using the novel composition in methods for manufacturing electronic devices.

Metal hardmask composition and processes for forming fine patterns on semiconductor substrates

The present invention relates to novel compositions comprising a metal component selected from a group chosen from at least one polyoxometalate, at least one heteropolyoxometalate and a mixture thereof; and, at least one organic component. The present invention also relates to methods of preparing the nanorod arrays and the nanorod materials and films. The present invention also relates to novel compositions to generate metal-oxide rich films, and also relates to processes for via or trench filling, reverse via or trench filling and imaging with underlayers. The materials are useful in wide range of manufacturing applications in many industries, including the semiconductor devices, electro-optical devices and energy storage industry.

Polyoxometalate and heteropolyoxometalate compositions and methods for their use

The present invention relates to a novel spin coatable composition comprising The present invention further relates to processes using the novel compositions.

Spin coatable metallic hard mask compositions and processes thereof

The present invention relates to novel, soluble, multi-ligand-substituted metal oxide compounds to form metal oxide films with improved stability as well as compositions made from them and methods of their use. Specifically, the invention pertains to compounds having the following structure (I) wherein M is a metal and n is 1 to 20, and wherein at least one of R, R, R, and Ris i) and at least at least one of R, R, R, and Ris ii), where i) is a silicon bearing organic moiety having at least 2 carbons, and ii) is an organic moiety. The invention also relates to spin-coatable compositions of compounds of structure (I) dissolved into a solvent. The present invention further relates to processes using this spin coatable composition to form a coating on a patterned substrate. 

Stable metal compounds as hardmasks and filling materials, their compositions and methods of use

The present invention relates to an absorbing hard mask antireflective coating composition comprising a novel polymer, where the novel polymer comprises in the backbone of the polymer four repeat units -A-, -B-, -C- and -D-, where A is repeat unit which comprises a fused aromatic ring in its backbone, B has the structure (1), C is a hydroxylbiphenyl of structure (2) and D is a derivatized fluorene of structure (3), where Ris C-Calkyl, Ris C-Calkyl, Rand Rare independently hydrogen or C-Calkyl, and Ar' and Ar&#x2033; are independently phenylenic, or naphthalenic derived moieties, Rand Rare independently &#x2014;OH or &#x2014;(CH)OH where n=2-4, and Rand Rare independently hydrogen or C-Calkyl. This invention also relates to a process for forming an image using the novel antireflective coating composition.

Antireflective coating composition and process thereof

This invention relates generally to silicon based photoresist compositions that can be used in forming low k dielectric constant materials suitable for use in electronic devices, methods of their use and the electronic devices made therefrom.

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Bethlehem, PA, United States of America

Elizabeth Wolfer