Intel Corporation

Arizona State University

Elizabeth Nofen

Robert M Nickerson

Nisha Ananthakrishnan

Amram Eitan

Purushotham Kaushik Muthur Srinath

Shripad Gokhale

Lenore Dai

Aditi Chattopadhyay

Bonsung Koo

John Decker

Hsin-Yu Li

Yang Guo

Jin Zou

Nick Ross

James Chris Matayabas, Jr

Yiqun Bai

Vipul V Mehta

Taylor W Gaines

Ziyin Lin

Yawei Liang

Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises a first package, wherein the first package comprises, a first package substrate, a first die over the first package substrate, a first mold layer over the first package substrate and around the first die, and a plurality of through mold interconnects (TMIs) through the first mold layer. The electronic package may further comprise a second package electrically coupled the first package by the TMIs, wherein the second package comprises a second package substrate, a second die over the second package substrate, and a solder resist over a surface of the second package substrate opposite from the second die. In an embodiment, the electronic package may also comprise a barrier between the first package and the second package.

Microelectronics package comprising a package-on-package (PoP) architecture with inkjet barrier material for controlling bondline thickness and PoP adhesive keep out zone

Microelectronics package comprising a package-on-package (PoP) architecture with inkjet barrier material for controlling bondline thickness and pop adhesive keep out zone

Microelectronics package comprising a package-on-package (POP) architecture with inkjet barrier material for controlling bondline thickness and POP adhesive keep out zone

Compositions including a thermosetting polymer network and a mechanophore covalently bonded to the thermosetting polymer network are provided. Substrates including the compositions are provided. In addition, methods of making the compositions and methods of monitoring stress on a substrate comprising the compositions are provided.

Mechanophore-grafted polymers to form stress-responsive thermoset network

A device is disclosed. The device includes a first die, a plurality of chiplets above the first die, a first underfill material beneath the chiplets, and a gap fill material between the chiplets. The gap fill material is different from the first underfill material. An interface region is formed between the first underfill material and the gap fill material.

Semiconductor die package with warpage management and process for forming such

An apparatus is provided which comprises: a die comprising an integrated circuit, a first material layer comprising a first metal, the first material layer on a surface of the die, and extending at least between opposite lateral sides of the die, a second material layer comprising a second metal over the first material layer, and a third material layer comprising silver particles and having a porosity greater than that of the second material layer, the third material layer between the first material layer and the second material layer. Other embodiments are also disclosed and claimed.

Integrated heat spreader comprising a silver and sintering silver layered structure

Growing community of inventors

Phoenix, AZ, United States of America

Elizabeth Nofen