X-fab Semiconductor Foundries Ag

X-fab Semiconductor Foundries Gmbh

Elizabeth Kho Ching Tee

Deb Kumar Pal

Alexander Dietrich Hölke

Steven John Pilkington

Florin Udrea

Marina Antoniou

An SOI or PSOI device including a device structure having a plurality of doped semiconductor regions. One or more of the doped semiconductor regions is in electrical communication with one or more electrical terminals. The device further includes an insulator layer located between a bottom surface of the device structure and a handle wafer. The device has an insulator trench structure located between a side surface of the device structure and a lateral semiconductor region located laterally with respect to the device structure. The insulator layer and the insulator trench structure are configured to insulate the device structure from the handle wafer and the lateral semiconductor region, and the insulator trench structure includes a plurality of insulator trenches.

Semiconductor device

A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes at least one termination portion provided adjacent to the drift portion. The at least one termination portion comprises a Super Junction structure.

Growing community of inventors

Sarawak, Malaysia

Elizabeth Kho Ching Tee