The United States of America As Represented by the Administrator of the

Elizabeth D Filer

Clyde A Morrison

Norman P Barnes

Mahendra G Jani

George E Lockard

Keith E Murray

A laser host material LuLF (LuLiF.sub.4) is doped with holmium (Ho) and thulium (Tm) to produce a new laser material that is capable of laser light production in the vicinity of 2 .mu.m. The material provides an advantage in efficiency over conventional Ho lasers because the LuLF host material allows for decreased threshold and upconversion over such hosts as YAG and YLF. The addition of Tm allows for pumping by commonly available GaAlAs laser diodes. For use with flashlamp pumping, erbium (Er) may be added as an additional dopant. For further upconversion reduction, the Tm can be eliminated and the Ho can be directly pumped.

Growing community of inventors

Poquoson, VA, United States of America

Elizabeth D Filer