Hewlett-packard Company

Elizabeth C Carr

Wayne M Greene

Michael B Cox

Frank Perlaki

A process of growing a dielectric layer includes a step of heating a gas mixture of at least one gas having a first chemical element of oxygen and a second chemical element other than oxygen to a first predetermined temperature to produce reactive precursors of the gas mixture. The reactive precursors are then introduced into a reaction chamber that houses at least one wafer to grow the dielectric layer on the wafer within the reaction chamber at a second predetermined temperature below the first predetermined temperature. A semiconductor manufacturing apparatus of growing the dielectric layer is also described.

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Sunnyvale, CA, United States of America

Elizabeth C Carr