Hitachi Energy Ltd

Hitachi Energy Switzerland Ag

Elizabeth Buitrago

Chiara Corvasce

Marco Bellini

Maxi Andenna

Luca De-Michielis

Charalampos Papadopoulos

Wolfgang Amadeus Vitale

Boni Kofi Boksteen

Babak Nikberg

A semiconductor device a first semiconductor layer of a first conductivity type at a first main side of a semiconductor wafer and a second semiconductor layer of a second conductivity type at second main side. The second semiconductor layer forms a pn junction with the first semiconductor layer. A first electrode is in ohmic contact with the first semiconductor layer and a second electrode layer is in ohmic contact with the second semiconductor layer. A first semiconductor region of the first conductivity type completely embedded in the second semiconductor layer and a second semiconductor region of the first conductivity type completely embedded in the second semiconductor layer.

Semiconductor device with gradual injection of charge carriers for softer reverse recovery

Growing community of inventors

Windisch, Switzerland

Elizabeth Buitrago